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Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2019-11-20 , DOI: 10.1002/pssb.201900521 Hisashi Yamada 1 , Sho Inotsume 1, 2 , Naoto Kumagai 1 , Toshikazu Yamada 1 , Mitsuaki Shimizu 1, 2
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2019-11-20 , DOI: 10.1002/pssb.201900521 Hisashi Yamada 1 , Sho Inotsume 1, 2 , Naoto Kumagai 1 , Toshikazu Yamada 1 , Mitsuaki Shimizu 1, 2
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The boron nitride (BN) thin films on Al2O3 substrates grown by chemical vapor deposition (CVD) using alternating supply of B2H6 and NH3 are investigated. A significant reduction in growth rates is observed when the growth temperature (Tg) is decreased from 1360 to 1140 °C, indicating incomplete decomposition of B2H6. The 2θ/ω scans of high‐resolution X‐ray diffraction (HRXRD) reveal that the intensity ratio of 2θ = 26.7°/54.0° is 16, which is close to the theoretical intensity ratio for hexagonal BN (h‐BN) of 17. By reducing Tg, the peak at 2θ = 26.2° is appeared, which is considered to the turbostratic BN (t‐BN). The Raman shift at 1369 cm−1 with a full width at half maximum of 20 cm−1 is analyzed, corresponding to the first‐order E2g symmetry vibrational mode in h‐BN. The high‐resolution transmission electron microscopy (HRTEM) confirms aligned 2D stacking of BN layers and the distance between interlayers of 0.3326 nm. The interlayers of 1.0 nm AlON are identified between BN layers and Al2O3 substrate.
中文翻译：
B2H6和NH3对化学气相沉积生长氮化硼层的生长温度影响
研究了通过交替使用B 2 H 6和NH 3的化学气相沉积（CVD）生长的Al 2 O 3衬底上的氮化硼（BN）薄膜。当生长温度（T g）从1360降低到1140°C时，观察到生长速率显着降低，表明B 2 H 6分解不完全。2 θ / ω高分辨率X射线衍射（HRXRD）的扫描揭示的2的强度比θ = 26.7°/ 54.0°为16，这是接近为六边形BN的理论强度比（ħ17. -BN）通过减少Ť克，在2峰值θ = 26.2°时出现，这被认为与乱层BN（吨-BN）。分析了1369 cm -1处的拉曼位移，其半峰全宽为20 cm -1，对应于h -BN中的一阶E 2g对称振动模式。高分辨率透射电子显微镜（HRTEM）确认BN层的对齐二维堆叠以及层间距离为0.3326 nm。在BN层和Al 2 O 3衬底之间识别出1.0 nm AlON的中间层。
更新日期：2020-04-18
中文翻译：
B2H6和NH3对化学气相沉积生长氮化硼层的生长温度影响
研究了通过交替使用B 2 H 6和NH 3的化学气相沉积（CVD）生长的Al 2 O 3衬底上的氮化硼（BN）薄膜。当生长温度（T g）从1360降低到1140°C时，观察到生长速率显着降低，表明B 2 H 6分解不完全。2 θ / ω高分辨率X射线衍射（HRXRD）的扫描揭示的2的强度比θ = 26.7°/ 54.0°为16，这是接近为六边形BN的理论强度比（ħ17. -BN）通过减少Ť克，在2峰值θ = 26.2°时出现，这被认为与乱层BN（吨-BN）。分析了1369 cm -1处的拉曼位移，其半峰全宽为20 cm -1，对应于h -BN中的一阶E 2g对称振动模式。高分辨率透射电子显微镜（HRTEM）确认BN层的对齐二维堆叠以及层间距离为0.3326 nm。在BN层和Al 2 O 3衬底之间识别出1.0 nm AlON的中间层。
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