Dielectric Dispersion at the Mn/ZnPc Interfaces,Physica Status Solidi (B) - Basic Solid State Physics

当前位置： X-MOL 学术 › Phys. Status Solidi B › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Dielectric Dispersion at the Mn/ZnPc Interfaces
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-03-26 , DOI: 10.1002/pssb.202000089
Atef F. Qasrawi _{1,

2} , Hadeel M. Zyoud ₁

Affiliation

Herein, the effects of manganese transparent (150 nm) substrates on the structural, nonlinear optical, and dielectric properties of zinc phthalocyanine are explored. ZnPc thin films are observed to exhibit deformed crystal structure associated with remarkable enhancement in the light absorbability by 21 times at 2.62 eV and by 173 times in the near‐infrared (NIR) region of light upon replacement of glass by transparent Mn substrates. The Mn layer also causes a redshift in the energy bandgap, allows generation of free carrier absorption process and increases the dielectric constant by more than 169% in the NIR region. The interaction between the manganese substrates with the organic ZnPc thin layers decreases the free holes density, widens the plasmon frequency range, and improves the drift mobility of holes. The nonlinear dielectric response with the highly improved light absorbability in the NIR range of light nominates the Mn/ZnPc thin films for optoelectronic applications.

中文翻译：

Mn / ZnPc界面处的介电色散

在本文中，探讨了锰透明（150 nm）衬底对酞菁锌的结构，非线性光学和介电性能的影响。观察到ZnPc薄膜会出现变形的晶体结构，与2.62 eV时的吸光率显着提高有关，在用透明Mn基板代替玻璃时，其光吸收率在2.62 eV时显着提高21倍，在近红外（NIR）区域中提高173倍。Mn层还会引起能带隙的红移，允许产生自由载流子吸收过程，并使NIR区域的介电常数增加169％以上。锰基板与有机ZnPc薄层之间的相互作用降低了自由空穴的密度，扩大了等离激元频率范围，并改善了空穴的漂移迁移率。

更新日期：2020-03-26

点击分享查看原文

点击收藏

阅读更多本刊新发论文