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Construction of MoS2-Nitrogen-Deficient Graphitic Carbon Nitride Anode toward High Performance Sodium-ions Batteries
Materials Letters ( IF 2.7 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.matlet.2020.127890 Yingmei Zhou , Shuying Zhang , Jing Xu , Yu Zhang
Materials Letters ( IF 2.7 ) Pub Date : 2020-08-01 , DOI: 10.1016/j.matlet.2020.127890 Yingmei Zhou , Shuying Zhang , Jing Xu , Yu Zhang
Abstract Molybdenum disulfide (MoS2) has attracted extensive attention as anode materials for sodium-ion batteries (SIBs). However, the electrochemical properties suffers from poor cycling stability due to its poor electronic conductivity. Herein, ultrathin MoS2 nanosheets are controllably deposition on nitrogen-deficient graphitic carbon nitride (ND-g-C3N4) that is obtained by magnesiothermic denitriding technology. ND-g-C3N4 as support with nitrogen-doping carbon material shows superior electronic conductivity, which can efficiently enhance Na+ diffusion mobility and provide fast electronic transferring. Benefitting from the synergistic effect between the superior electronic conductivity of ND-g-C3N4 and ultrathin MoS2 nanosheets, the as-prepared MoS2-ND-C3N4 delivers a high initial reversible specific capacity of 610.66 mA h g−1 at 0.1 A g−1, superior rate performance and remarkable long-cycle stability with 365.8 mA h g−1 at 1 A g−1 after 500 loops for SIBs. Therefore, the proposed MoS2-ND-C3N4 can unambiguously promote MoS2-carbon based materials in energy-storage applications.
中文翻译:
面向高性能钠离子电池的 MoS2-缺氮石墨氮化碳负极的构建
摘要 二硫化钼(MoS2)作为钠离子电池(SIBs)的负极材料受到了广泛的关注。然而,由于其较差的电子导电性,电化学性能受到较差的循环稳定性的影响。在此,超薄 MoS2 纳米片可控沉积在通过镁热脱氮技术获得的缺氮石墨碳氮化物 (ND-g-C3N4) 上。ND-g-C3N4 作为掺氮碳材料的载体表现出优异的电子导电性,可有效增强 Na+ 扩散迁移率并提供快速的电子转移。受益于 ND-g-C3N4 和超薄 MoS2 纳米片之间的协同效应,所制备的 MoS2-ND-C3N4 在 0.1 A g-1 时提供了 610.66 mA h g-1 的高初始可逆比容量,优异的倍率性能和卓越的长循环稳定性,SIBs 500 次循环后在 1 A g-1 下为 365.8 mA h g-1。因此,所提出的 MoS2-ND-C3N4 可以明确促进 MoS2-碳基材料在储能应用中的应用。
更新日期:2020-08-01
中文翻译:
面向高性能钠离子电池的 MoS2-缺氮石墨氮化碳负极的构建
摘要 二硫化钼(MoS2)作为钠离子电池(SIBs)的负极材料受到了广泛的关注。然而,由于其较差的电子导电性,电化学性能受到较差的循环稳定性的影响。在此,超薄 MoS2 纳米片可控沉积在通过镁热脱氮技术获得的缺氮石墨碳氮化物 (ND-g-C3N4) 上。ND-g-C3N4 作为掺氮碳材料的载体表现出优异的电子导电性,可有效增强 Na+ 扩散迁移率并提供快速的电子转移。受益于 ND-g-C3N4 和超薄 MoS2 纳米片之间的协同效应,所制备的 MoS2-ND-C3N4 在 0.1 A g-1 时提供了 610.66 mA h g-1 的高初始可逆比容量,优异的倍率性能和卓越的长循环稳定性,SIBs 500 次循环后在 1 A g-1 下为 365.8 mA h g-1。因此,所提出的 MoS2-ND-C3N4 可以明确促进 MoS2-碳基材料在储能应用中的应用。