Abstract SiGe is one of the most promising strain relaxed buffer at advanced technology nodes. In this paper, the effects of pentapotassium; 2-[bis[2-[bis(carboxylatomethyl)amino]ethyl] amino]acetate (DTPA-5K) and triethanolamine (TEA) on Si0.5Ge0.5 chemical mechanical polishing (CMP) under alkaline condition were investigated. The results show that, DTPA-5K is a corrosion and rate enhancer for Si0.5Ge0.5. GeO2 and the silicon sub-oxide are believed to be generated on Si0.5Ge0.5 surface in DTPA-5K solution. The Si0.5Ge0.5 removal rate and its selectivity to TEOS are both proportional to DTPA-5K concentration. However, DTPA-5K has an impact on the slurry stability. With proper DTPA-5K concentration to ensure colloidal stability, the surface roughness of Si0.5Ge0.5 can be improved by triethanolamine (TEA). An optimized slurry formulation in the presence of DTPA-5K and TEA yielded a high Si0.5Ge0.5 removal rate, an acceptable within-wafer non-uniformity (WIWNU), very low surface roughness and desirable selectivity to TEOS. A CMP mechanism for this system is also proposed.

中文翻译：

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化学机械抛光过程中多功能胺对SiGe表面光洁度的影响

摘要 SiGe 是先进技术节点中最有前途的应变松弛缓冲器之一。本文介绍了五钾的作用；研究了碱性条件下 SiO.5Ge0.5 化学机械抛光 (CMP) 上的 2-[双[2-[双(羧基甲基)氨基]乙基]氨基]乙酸酯 (DTPA-5K) 和三乙醇胺 (TEA)。结果表明，DTPA-5K是Si0.5Ge0.5的腐蚀和速率增强剂。GeO2 和硅低氧化物被认为是在 DTPA-5K 溶液中的 Si0.5Ge0.5 表面上生成的。Si0.5Ge0.5 去除率及其对 TEOS 的选择性均与 DTPA-5K 浓度成正比。然而，DTPA-5K 对浆料稳定性有影响。通过适当的DTPA-5K浓度来保证胶体稳定性，三乙醇胺(TEA)可以改善Si0.5Ge0.5的表面粗糙度。在 DTPA-5K 和 TEA 存在下优化的浆料配方产生了高 Si0.5Ge0.5 去除率、可接受的晶片内非均匀性 (WIWNU)、非常低的表面粗糙度和理想的 TEOS 选择性。还提出了用于该系统的 CMP 机制。