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Synthesis of samarium telluride thin films by successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2016-05-01 , DOI: 10.1016/j.mssp.2015.10.012
V.S. Kumbhar , A.C. Lokhande , N.S. Gaikwad , C.D. Lokhande

Abstract The present paper deals with synthesis of samarium telluride (Sm 2 Te 3 ) thin films using simple and low cost successive ionic layer adsorption and reaction (SILAR) method for supercapacitor application. The Sm 2 Te 3 thin films are characterized by X-ray diffraction (XRD) for structural determination, energy dispersive analysis of X-ray (EDAX) for elemental composition, field emission scanning electron microscopy (FE-SEM) for surface morphological study and contact angle measurement for wettability study. The Sm 2 Te 3 exhibits orthorhombic crystal structure with cloud like surface morphology. The film surface showed lyophilic behavior with contact angle of 5.7° for propylene carbonate (PC). Further, electrochemical measurements are carried out in LiClO 4 –PC electrolyte using cyclic voltammetry (CV), galvanostatic charge discharge and electrochemical impedance spectroscopy (EIS) techniques. The Sm 2 Te 3 film showed maximum specific capacitance and energy density of 144 F g −1 and 10 W h kg −1 respectively. The EIS study showed negligible change in resistive parameters after 1000 electrochemical cycles.

中文翻译:

连续离子层吸附反应(SILAR)法合成碲化钐薄膜用于超级电容器

摘要 本文涉及使用简单且低成本的连续离子层吸附和反应 (SILAR) 方法合成碲化钐 (Sm 2 Te 3 ) 薄膜,用于超级电容器应用。Sm 2 Te 3 薄膜通过用于结构测定的 X 射线衍射 (XRD)、用于元素组成的 X 射线能量色散分析 (EDAX)、用于表面形态研究的场发射扫描电子显微镜 (FE-SEM) 和用于润湿性研究的接触角测量。Sm 2 Te 3 表现出具有云状表面形态的正交晶体结构。薄膜表面表现出亲液行为,碳酸亚丙酯 (PC) 的接触角为 5.7°。此外,使用循环伏安法 (CV) 在 LiClO 4 -PC 电解质中进行电化学测量,恒电流充电放电和电化学阻抗谱 (EIS) 技术。Sm 2 Te 3 薄膜的最大比电容和能量密度分别为144 F g -1 和10 W h kg -1 。EIS 研究表明,1000 次电化学循环后电阻参数的变化可以忽略不计。
更新日期:2016-05-01
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