Boosting the Conversion Efficiency Over 20% in MAPbI3 Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector.,ACS Applied Materials & Interfaces

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Boosting the Conversion Efficiency Over 20% in MAPbI3 Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-05-08 , DOI: 10.1021/acsami.0c04618
Bhaskar Parida ₁ , Saemon Yoon ₁ , Jun Ryu ₁ , Shuzi Hayase ₂ , Sang Mun Jeong ₃ , Dong-Won Kang ₁

Affiliation

Recently, nickel oxide (NiOx) thin films have been used as an efficient and robust hole transport layer (HTL) in inverted planar perovskite solar cells (IP-PSCs) to replace costly and unstable organic transport materials. However, the power conversion efficiency (PCE) of most IP-PSCs using NiOx HTLs is rather limited below 20% due to insufficient electronic conductivity of the NiOx. In this work, solution-processed Al-doped NiOx (ANO) films are suggested as HTLs for low-cost and stable IP-PSCs. The electrical conductivity of the NiOx film is significantly enhanced by Al doping, which effectively reduces the nonradiative recombination losses at the HTL-perovskite interfaces and boosts hole extraction/transportation. The device with undoped NiOx shows the best PCE of 16.56%, whereas ANO HTL (5% doping) contributes to achieving a PCE of 20.84%, which outperforms other CH3NH3PbI3 IP-PSCs with NiOx-based HTLs reported to date. Moreover, a reliability test (1728 h storage) shows that the performance stability is enhanced by approximately 11% by employing ANO HTLs. This investigation into ANO HTLs provides a new guideline for the further development of highly efficient and reliable IP-PSCs using low-cost and robust metal oxide HTLs.

中文翻译：

通过使用溶液处理的铝掺杂氧化镍空穴收集器，可将MAPbI3钙钛矿平面太阳能电池的转换效率提高20％以上。

最近，氧化镍（NiOx）薄膜已被用作反向平面钙钛矿太阳能电池（IP-PSC）中的高效且坚固的空穴传输层（HTL），以取代昂贵且不稳定的有机传输材料。但是，由于NiOx的电子电导率不足，大多数使用NiOx HTL的IP-PSC的功率转换效率（PCE）都被限制在20％以下。在这项工作中，建议将溶液处理的Al掺杂NiOx（ANO）膜用作HTL，以实现低成本和稳定的IP-PSC。Al掺杂显着增强了NiOx膜的电导率，有效地降低了HTL-钙钛矿界面的非辐射复合损失，并促进了空穴的提取/传输。未掺杂NiOx的器件的最佳PCE为16.56％，而ANO HTL（掺杂5％）有助于实现20.84％的PCE，与迄今为止报道的基于NiOx的HTL相比，其性能要优于其他CH3NH3PbI3 IP-PSC。此外，可靠性测试（存储1728小时）表明，通过使用ANO HTL，性能稳定性提高了大约11％。这项对ANO HTL的调查为进一步开发使用低成本且坚固耐用的金属氧化物HTL的IP-PSC提供了新的指南。

更新日期：2020-04-24

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