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Vapor-Deposited Cs2AgBiCl6 Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector.
Advanced Science ( IF 14.3 ) Pub Date : 2020-04-22 , DOI: 10.1002/advs.201903662
Ming Wang 1, 2 , Peng Zeng 1, 2 , Zenghui Wang 3 , Mingzhen Liu 1, 2
Affiliation  

Double perovskites have shown great potentials in addressing the toxicity and instability issues of lead halide perovskites toward practical applications. However, fabrication of high‐quality double perovskite thin films has remained challenging. Here, sequential vapor deposition is used to fabricate high‐quality Cs2AgBiCl6 perovskite films with balanced stoichiometry, superior morphology, and highly oriented crystallinity, with an indirect bandgap of 2.41 eV. Using a diode structure, self‐powered Cs2AgBiCl6 ultraviolet (UV) photodetectors are demonstrated with high selectivity centered at 370 nm, with low dark current density (≈10−7 mA cm−2), high photoresponsivity (≈10 mA W−1), and detectivity (≈1012 Jones). Its detectivity is among the highest in all double‐perovskite‐based photodetectors reported to date and surpassing the performance of other perovskite photodetectors as well as metal oxide in the UV range. The devices also show excellent environmental and irradiation stability comparable to state‐of‐the‐art UV detectors. The findings help pave the way toward application of double perovskites in optoelectronic devices.

中文翻译:


气相沉积 Cs2AgBiCl6 双钙钛矿薄膜用于高选择性和稳定的紫外光电探测器。



双钙钛矿在解决卤化铅钙钛矿的毒性和不稳定性问题的实际应用方面显示出巨大的潜力。然而,高质量双钙钛矿薄膜的制造仍然具有挑战性。在这里,采用连续气相沉积法制备了高质量的Cs 2 AgBiCl 6钙钛矿薄膜,该薄膜具有平衡的化学计量、优异的形貌和高度定向的结晶度,间接带隙为2.41 eV。使用二极管结构,自供电Cs 2 AgBiCl 6紫外(UV)光电探测器具有以370 nm为中心的高选择性、低暗电流密度(≈10 −7 mA cm −2 )、高光响应性(≈10 mA W −1 ) 和探测率 (≈10 12 Jones)。其探测率是迄今为止报道的所有双钙钛矿光电探测器中最高的,并且超过了其他钙钛矿光电探测器以及紫外范围内金属氧化物的性能。该设备还表现出与最先进的紫外线检测器相当的出色的环境和辐射稳定性。这些发现有助于为双钙钛矿在光电器件中的应用铺平道路。
更新日期:2020-04-22
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