Temperature-Controlled Fragmentation and Ripening: Synthesis of ZnSe Nanorods with Variable Dimensions and Crystal Structure Starting from Ultrathin ZnSe Nanowires,Chemistry of Materials

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Temperature-Controlled Fragmentation and Ripening: Synthesis of ZnSe Nanorods with Variable Dimensions and Crystal Structure Starting from Ultrathin ZnSe Nanowires
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-04-20 , DOI: 10.1021/acs.chemmater.0c00441
Jiajia Ning ₁ , Stephen V. Kershaw ₁ , Andrey L. Rogach ₁

Affiliation

Heavy-metal-free semiconductor nanomaterials have attracted attention because of their importance in both fundamental research and commercial applications. In particular, polarized fluorescence emission in one-dimensional (1D) semiconductors makes them highly attractive as display materials. Herein, we developed a novel colloidal synthesis approach toward 1D ZnSe nanostructures with controlled size and crystal structure, which we call “temperature-controlled fragmentation and ripening”. First, ultrathin ZnSe nanowires (NWs) with a length of 50–200 nm and diameter of ∼1.1 nm were synthesized. ZnSe nanorods (NRs) have been obtained through the fragmentation of these NWs in a controlled step while keeping the same diameter, and the length of the final ZnSe NRs has been tuned in the range of 10–20 nm by moderating the heating procedure. Using a higher temperature for fragmentation allowed us to break down the ZnSe NWs to shorter ZnSe NRs, whereas controlling the final growth temperature of the ZnSe NRs in a subsequent ripening stage allowed us to obtain them in either cubic zinc blende (ZB; at 220 °C) or hexagonal wurtzite (WZ; at 240 °C) crystal structures. This set of growth processes flipping from bottom-up to top-down to form ZnSe NRs with controlled length and selection of the final crystal structure (either hexagonal WZ or cubic ZB) provides a novel growth mechanism to synthesize 1D semiconductor nanostructures.

中文翻译：

温度控制的断裂和成熟：从超薄ZnSe纳米线开始的具有可变尺寸和晶体结构的ZnSe纳米棒的合成

无重金属半导体纳米材料由于其在基础研究和商业应用中的重要性而受到关注。尤其是，一维（1D）半导体中的偏振荧光发射使它们作为显示材料极具吸引力。本文中，我们针对尺寸和晶体结构受控的一维ZnSe纳米结构开发了一种新颖的胶体合成方法，我们将其称为“温度控制的碎片化和熟化”。”。首先，合成了长度为50-200 nm，直径为〜1.1 nm的超薄ZnSe纳米线（NWs）。ZnSe纳米棒（NRs）是通过在控制步骤中将这些NW裂解而获得的，同时保持相同的直径，并且通过调节加热程序将最终ZnSe NRs的长度调整在10–20 nm的范围内。使用较高的温度进行破碎，可以将ZnSe NR分解为较短的ZnSe NR，而在随后的熟化阶段控制ZnSe NR的最终生长温度，可以使我们在任一立方锌混合物（ZB; 220°C）下获得它们。 C）或六方纤锌矿（WZ;在240°C）的晶体结构。

更新日期：2020-04-20

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