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High‐Efficiency CsPbI2Br Perovskite Solar Cells with Dopant‐Free Poly(3‐hexylthiophene) Hole Transporting Layers
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-04-20 , DOI: 10.1002/aenm.202000501
Ming‐Hua Li 1 , Shun‐Chang Liu 1, 2 , Fa‐Zheng Qiu 1 , Zhen‐Yun Zhang 1 , Ding‐Jiang Xue 1 , Jin‐Song Hu 1, 2
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-04-20 , DOI: 10.1002/aenm.202000501
Ming‐Hua Li 1 , Shun‐Chang Liu 1, 2 , Fa‐Zheng Qiu 1 , Zhen‐Yun Zhang 1 , Ding‐Jiang Xue 1 , Jin‐Song Hu 1, 2
Affiliation
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CsPbI2Br is emerging as a promising all‐inorganic material for perovskite solar cells (PSCs) due to its more stable lattice structure and moisture resistance compared to CsPbI3, although its device performance is still much behind this counterpart. Herein, a preannealing process is developed and systematically investigated to achieve high‐quality CsPbI2Br films by regulating the nucleation and crystallization of perovskite. The preannealing temperature and time are specifically optimized for a dopant‐free poly(3‐hexylthiophene) (P3HT)‐based device to target dopant‐induced drastic performance degradation for spiro‐OMeTAD‐based devices. The resulting P3HT‐based device exhibits comparable power conversion efficiency (PCE) to spiro‐OMeTAD‐based devices but much enhanced ambient stability with over 95% PCE after 1300 h. A diphenylamine derivative is introduced as a buffer layer to improve the energy‐level mismatch between CsPbI2Br and P3HT. A record‐high PCE of 15.50% for dopant‐free P3HT‐based CsPbI2Br PSCs is achieved by alleviating the open‐circuit voltage loss with the buffer layer. These results demonstrate that the preannealing processing together with a suitable buffer layer are applicable strategies for developing dopant‐free P3HT PSCs with high efficiency and stability.
中文翻译：
具有无掺杂聚（3-己基噻吩）空穴传输层的高效CsPbI2Br钙钛矿太阳能电池
与CsPbI 3相比，CsPbI 2 Br的晶格结构和耐湿性更高，因此它成为钙钛矿太阳能电池（PSC）的有希望的全无机材料，尽管其器件性能仍远远落后于此。在此，开发了预退火工艺并进行了系统研究，以实现高质量的CsPbI 2通过调节钙钛矿的成核和结晶来形成Br膜。预退火温度和时间专门针对基于无掺杂剂的聚（3-己基噻吩）（P3HT）的器件进行了优化，以针对基于掺杂剂导致的基于螺旋OMeTAD的器件的性能急剧下降。最终的基于P3HT的设备显示出与基于spiro-OMeTAD的设备相当的功率转换效率（PCE），但在1300小时后PCE超过95％时，环境稳定性大大提高。引入二苯胺衍生物作为缓冲层，以改善CsPbI 2 Br和P3HT之间的能级不匹配。基于P3HT的无掺杂CsPbI 2的PCE达到创纪录的15.50％Br PSC是通过减轻缓冲层的开路电压损耗来实现的。这些结果表明，预退火处理以及合适的缓冲层是开发具有高效率和稳定性的无掺杂P3HT PSC的适用策略。
更新日期：2020-04-20
中文翻译：
具有无掺杂聚（3-己基噻吩）空穴传输层的高效CsPbI2Br钙钛矿太阳能电池
与CsPbI 3相比，CsPbI 2 Br的晶格结构和耐湿性更高，因此它成为钙钛矿太阳能电池（PSC）的有希望的全无机材料，尽管其器件性能仍远远落后于此。在此，开发了预退火工艺并进行了系统研究，以实现高质量的CsPbI 2通过调节钙钛矿的成核和结晶来形成Br膜。预退火温度和时间专门针对基于无掺杂剂的聚（3-己基噻吩）（P3HT）的器件进行了优化，以针对基于掺杂剂导致的基于螺旋OMeTAD的器件的性能急剧下降。最终的基于P3HT的设备显示出与基于spiro-OMeTAD的设备相当的功率转换效率（PCE），但在1300小时后PCE超过95％时，环境稳定性大大提高。引入二苯胺衍生物作为缓冲层，以改善CsPbI 2 Br和P3HT之间的能级不匹配。基于P3HT的无掺杂CsPbI 2的PCE达到创纪录的15.50％Br PSC是通过减轻缓冲层的开路电压损耗来实现的。这些结果表明，预退火处理以及合适的缓冲层是开发具有高效率和稳定性的无掺杂P3HT PSC的适用策略。
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