In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I –V ) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I –V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty.

中文翻译：

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将电阻随机存取存储器集成到具有鳍状结构的低温多晶硅晶体管中作为1T1R器件

在这项研究中，成功​​地制造了一种结合了鳍状低温多晶硅（LTPS）晶体管和电阻式随机存取存储器（RRAM）的单晶体管单电阻（1T1R）结构。对于鳍状LTPS晶体管，n型和p型均显示出出色的电输出特性。鳍状结构产生更稳定的输出特性。而且，成形和电流-电压（我- V）特性在本研究中测量，并且RRAM显示出大约-1.9 V.对于成形电压我- V开关性能稳定，并且性能优异，设置和复位电压在100个周期内仅显示最小变化。此外，将鳍状LTPS晶体管和RRAM组合为1T1R结构可在100个周期内实现良好的操作，并具有出色的保持性和耐久性。根据这些结果，RRAM可以成功地与鳍状LTPS晶体管结合使用，毫不费力地应用于当前的集成电路工艺中。