An asymmetric naphthalimide derivative for n-channel organic field-effect transistors†,Physical Chemistry Chemical Physics

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An asymmetric naphthalimide derivative for n-channel organic field-effect transistors†
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2015-05-20 00:00:00 , DOI: 10.1039/c5cp01302j
Zongrui Wang _{1,

2,

3,

4,

5} , Jianfeng Zhao _{6,

7,

8,

9,

10} , Huanli Dong _{1,

2,

3,

4,

5} , Ge Qiu _{1,

2,

3,

4,

5} , Qichun Zhang _{6,

7,

8,

9,

11} , Wenping Hu _{1,

2,

3,

4,

5}

Affiliation

A new naphthalene diimide (NDI) derivative with an asymmetric aromatic backbone of 2-tetradecylbenzo[lmn]benzo[4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (IZ0) was designed and synthesized. Low LUMO level, large energy gap, and high thermal stability are characterized for this IZ0 compound. The OFET devices based on an IZ0 semiconductor exhibit typical n-type behavior. Through continuously optimizing the fabrication conditions, high performance n-channel OFETs were fabricated based on IZ0 films and single crystals, with the highest carrier mobility of 0.072 cm² V⁻¹ s⁻¹ and 0.22 cm² V⁻¹ s⁻¹, respectively.

中文翻译：

用于n沟道有机场效应晶体管的不对称萘二甲酰亚胺衍生物†

一种具有不对称芳族骨架的2-十四烷基苯并[ lmn ]苯并[4,5]咪唑[ 2,1- b ] [3,8]菲咯啉-1,3,6（2 H）的新型萘二酰亚胺（NDI）衍生物-trione（IZ0）的设计和合成。这种IZ0化合物的特点是LUMO水平低，能隙大，热稳定性高。基于IZ0半导体的OFET器件表现出典型的n型行为。通过不断优化制造条件，以IZ0膜和单晶为基础，制备了高性能n沟道OFET，载流子迁移率最高，为0.072 cm ² V ^-1 s ^-1和0.22 cm ² V ^-1 s ^-1，分别。

更新日期：2015-05-20

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