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Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and Sulfurization.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-04-24 , DOI: 10.1021/acsami.0c02393
Heekyeong Park 1 , Na Liu 1 , Bong Ho Kim 2 , Soon Hyeong Kwon 2 , Seungho Baek 1 , Sehwan Kim 1 , Han-Koo Lee 3 , Young Joon Yoon 2 , Sunkook Kim 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-04-24 , DOI: 10.1021/acsami.0c02393
Heekyeong Park 1 , Na Liu 1 , Bong Ho Kim 2 , Soon Hyeong Kwon 2 , Seungho Baek 1 , Sehwan Kim 1 , Han-Koo Lee 3 , Young Joon Yoon 2 , Sunkook Kim 1
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Two-dimensional molybdenum disulfide (MoS2) has emerged as a promising material for optoelectronic applications because of its superior electrical and optical properties. However, the difficulty in synthesizing large-scale MoS2 films has been recognized as a bottleneck in uniform and reproducible device fabrication and performance. Here, we proposed a radio-frequency magnetron sputter system, and post-treatments of electron beam irradiation and sulfurization to obtain large-scale continuous and high-quality multilayer MoS2 films. Large-area uniformity was confirmed by no deviation of electrical performance in fabricated MoS2 thin-film transistors (TFTs) with an average on/off ratio of 103 and a transconductance of 0.67 nS. Especially, the photoresponsivity of our MoS2 TFT reached 3.7 A W-1, which is a dramatic improvement over that of a previously reported multilayer MoS2 TFT (0.1 A W-1) because of the photogating effect induced by the formation of trap states in the band gap. Finally, we organized a 4 × 4 MoS2 phototransistor array with high photosensitivity, linearity, and uniformity for light detection, which demonstrates the great potential of 2D MoS2 for future-oriented optoelectronic devices.
中文翻译：
基于射频溅射，电子束辐照和硫化生长的大规模MoS2的超均匀且可扩展的多层MoS2光电晶体管阵列。
二维二硫化钼（MoS2）由于其优越的电学和光学特性而成为一种有前途的光电应用材料。但是，合成大规模MoS2膜的困难已被认为是均匀且可复制的器件制造和性能的瓶颈。在这里，我们提出了一种射频磁控溅射系统，并对电子束辐照和硫化进行后处理，以获得大规模连续且高质量的多层MoS2薄膜。通过制造的MoS2薄膜晶体管（TFT）的电性能没有偏差来确认大面积均匀性，平均开/关比为103，跨导为0.67 nS。特别是，我们的MoS2 TFT的光敏度达到3.7 A W-1，与以前报道的多层MoS2 TFT（0.1 A W-1）相比，这是一个显着的改进，这是由于在带隙中形成陷阱态而引起的光闸效应。最后，我们组织了一个具有高光敏性，线性和均匀性的4×4 MoS2光电晶体管阵列用于光检测，这证明了二维MoS2在面向未来的光电器件中的巨大潜力。
更新日期：2020-04-13
中文翻译：
基于射频溅射，电子束辐照和硫化生长的大规模MoS2的超均匀且可扩展的多层MoS2光电晶体管阵列。
二维二硫化钼（MoS2）由于其优越的电学和光学特性而成为一种有前途的光电应用材料。但是，合成大规模MoS2膜的困难已被认为是均匀且可复制的器件制造和性能的瓶颈。在这里，我们提出了一种射频磁控溅射系统，并对电子束辐照和硫化进行后处理，以获得大规模连续且高质量的多层MoS2薄膜。通过制造的MoS2薄膜晶体管（TFT）的电性能没有偏差来确认大面积均匀性，平均开/关比为103，跨导为0.67 nS。特别是，我们的MoS2 TFT的光敏度达到3.7 A W-1，与以前报道的多层MoS2 TFT（0.1 A W-1）相比，这是一个显着的改进，这是由于在带隙中形成陷阱态而引起的光闸效应。最后，我们组织了一个具有高光敏性，线性和均匀性的4×4 MoS2光电晶体管阵列用于光检测，这证明了二维MoS2在面向未来的光电器件中的巨大潜力。
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