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UV-Nanoimprinting Lithography Photoresists with No Photoinitiator and Low Polymerization Shrinkage
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-04-06 , DOI: 10.1021/acs.iecr.9b07103 Mingliang Zhang 1 , Shengling Jiang 2, 3 , Yanjing Gao 1 , Jun Nie 2, 4 , Fang Sun 1, 4, 5
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-04-06 , DOI: 10.1021/acs.iecr.9b07103 Mingliang Zhang 1 , Shengling Jiang 2, 3 , Yanjing Gao 1 , Jun Nie 2, 4 , Fang Sun 1, 4, 5
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In this work, a photopolymerizable disulfide monomer containing C(aryl)–S, disulfanediyl bis(4,1-phenylene) diacrylate (ADSDA), was designed and synthesized. UV-nanoimprinting lithography photoresists with no photoinitiator and low polymerization shrinkage were then prepared with ADSDA and benzyl methacrylate (BMA). The photoresists with ADSDA exhibited a great photopolymerization capability in the absence of any photoinitiator, and their double bond conversion reached up to 86%. With the increase of ADSDA content in the photoresists, the Young’s modulus, indentation hardness, and thermal stability of the photoresists all increased first, followed by a slight decrease. Remarkably, the photoresists with ADSDA had a very low polymerization shrinkage which dropped to as low as 0.56% because of the “breakage–recombination” reversible reaction of the S–S bond during the photopolymerization process. More significantly, the pattern of the original mold with 212 nm line width and 104 nm height could be accurately duplicated without flaws by the photoresist, which exhibited a prominent pattern transfer property.
中文翻译：
无光引发剂和低聚合收缩率的紫外-纳米压印光刻胶
在这项工作中，设计并合成了含有C（芳基）–S，二亚砜基二（4,1-亚苯基）二丙烯酸二亚砜二基酯（ADSDA）的可光聚合二硫单体。然后用ADSDA和甲基丙烯酸苄酯（BMA）制备了无光引发剂和低聚合收缩率的UV-纳米压印光刻胶。在没有任何光引发剂的情况下，具有ADSDA的光致抗蚀剂具有强大的光聚合能力，其双键转化率高达86％。随着光致抗蚀剂中ADSDA含量的增加，光致抗蚀剂的杨氏模量，压痕硬度和热稳定性均先增加，然后略有下降。值得注意的是，具有ADSDA的光致抗蚀剂的聚合收缩率非常低，下降到了0。56％是由于光聚合过程中S–S键的“断裂-重组”可逆反应。更重要的是，通过光致抗蚀剂可以精确地复制具有212 nm线宽和104 nm高的原始模具的图案，而不会出现缺陷，从而显示出显着的图案转印性能。
更新日期：2020-04-24
中文翻译：
无光引发剂和低聚合收缩率的紫外-纳米压印光刻胶
在这项工作中，设计并合成了含有C（芳基）–S，二亚砜基二（4,1-亚苯基）二丙烯酸二亚砜二基酯（ADSDA）的可光聚合二硫单体。然后用ADSDA和甲基丙烯酸苄酯（BMA）制备了无光引发剂和低聚合收缩率的UV-纳米压印光刻胶。在没有任何光引发剂的情况下，具有ADSDA的光致抗蚀剂具有强大的光聚合能力，其双键转化率高达86％。随着光致抗蚀剂中ADSDA含量的增加，光致抗蚀剂的杨氏模量，压痕硬度和热稳定性均先增加，然后略有下降。值得注意的是，具有ADSDA的光致抗蚀剂的聚合收缩率非常低，下降到了0。56％是由于光聚合过程中S–S键的“断裂-重组”可逆反应。更重要的是，通过光致抗蚀剂可以精确地复制具有212 nm线宽和104 nm高的原始模具的图案，而不会出现缺陷，从而显示出显着的图案转印性能。
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