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Strongly Enhanced Photoluminescence and Photoconductivity in Erbium-Doped MAPbBr3 Single Crystals
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-04-06 , DOI: 10.1021/acs.jpcc.0c01959 Shanshan Rong 1 , Yequan Xiao 1 , Jiexuan Jiang 1 , Qiugui Zeng 1 , Yanbo Li 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-04-06 , DOI: 10.1021/acs.jpcc.0c01959 Shanshan Rong 1 , Yequan Xiao 1 , Jiexuan Jiang 1 , Qiugui Zeng 1 , Yanbo Li 1
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B-site doping of organic–inorganic perovskites is an effective way to improve its optoelectronic properties; however, it is rarely reported for perovskite single crystals. Here, we report the B-site doping of MAPbBr3 single crystals with erbium (Er) via a simple antisolvent vapor-assisted crystallization method. The Er-doped MAPbBr3 single crystal exhibits significantly enhanced photoluminescence (PL) and photoconductivity compared with the undoped sample. Low-temperature PL spectroscopy reveals that Er-doping creates a shallow acceptor level inside the band gap of MAPbBr3, which contributes to significantly enhanced PL emission because of bound excitons. Furthermore, Er-doping also effectively lowers the deep trap density and improves the conductivity and mobility of the single crystal. Consequently, the Er-doped MAPbBr3 single crystal photodetector shows responsivity and external quantum efficiency approximately 5 times higher than those of the undoped device. The effective improvement of optoelectronic properties of the MAPbBr3 single crystal by Er-doping may benefit a wide range of devices including photodetectors, light-emitting diodes, and lasers.
中文翻译：
掺ErMAPbBr 3单晶中的光致发光和光导性大大增强
有机无机钙钛矿的B位掺杂是改善其光电性能的有效方法。但是，很少有钙钛矿单晶的报道。在这里，我们报告通过简单的反溶剂气相辅助结晶方法用with（Er）掺杂MAPbBr 3单晶的B位掺杂。与未掺杂样品相比，掺Er的MAPbBr 3单晶具有显着增强的光致发光（PL）和光电导性。低温PL光谱显示Er掺杂在MAPbBr 3的带隙内产生了一个浅的受主能级，这是由于受激子束缚而大大提高了PL排放。此外，Er掺杂还有效地降低了深陷阱密度并提高了单晶的电导率和迁移率。因此，掺Er的MAPbBr 3单晶光电探测器的响应度和外部量子效率大约是未掺杂器件的5倍。通过Er掺杂有效改善MAPbBr 3单晶的光电性能可能使包括光电检测器，发光二极管和激光器在内的各种器件受益。
更新日期：2020-04-24
中文翻译：
掺ErMAPbBr 3单晶中的光致发光和光导性大大增强
有机无机钙钛矿的B位掺杂是改善其光电性能的有效方法。但是，很少有钙钛矿单晶的报道。在这里，我们报告通过简单的反溶剂气相辅助结晶方法用with（Er）掺杂MAPbBr 3单晶的B位掺杂。与未掺杂样品相比，掺Er的MAPbBr 3单晶具有显着增强的光致发光（PL）和光电导性。低温PL光谱显示Er掺杂在MAPbBr 3的带隙内产生了一个浅的受主能级，这是由于受激子束缚而大大提高了PL排放。此外，Er掺杂还有效地降低了深陷阱密度并提高了单晶的电导率和迁移率。因此，掺Er的MAPbBr 3单晶光电探测器的响应度和外部量子效率大约是未掺杂器件的5倍。通过Er掺杂有效改善MAPbBr 3单晶的光电性能可能使包括光电检测器，发光二极管和激光器在内的各种器件受益。
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