MoS2 Assisted Self-Assembled Poly(3-hexylthiophene) Thin Films at an Air/Liquid Interface for High-Performance Field-Effect Transistors under Ambient Conditions,The Journal of Physical Chemistry C

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MoS2 Assisted Self-Assembled Poly(3-hexylthiophene) Thin Films at an Air/Liquid Interface for High-Performance Field-Effect Transistors under Ambient Conditions
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-04-07 , DOI: 10.1021/acs.jpcc.9b11808
Vivek Chaudhary ₁ , Rajiv Kumar Pandey ₂ , Praveen Kumar Sahu ₂ , Rajiv Prakash ₂ , Naresh Kumar ₁ , Arun Kumar Singh _{1,

3}

Affiliation

It is a key challenge to achieve long-range ordering in the nanoscale morphology of π-conjugated polymers for efficient charge transport in organic electronic devices. The long-range ordering and aggregation in poly(3-hexylthiophene) (P3HT) have been accomplished by introducing two-dimensional (2D) molybdenum disulfide (MoS₂) nanosheets to a polymer matrix, followed by ultrasonication in chloroform. Thin films of synthesized P3HT/MoS₂ nanocomposites, having various fractions of MoS₂ in the P3HT matrix, have been fabricated on the air/liquid interface. UV–vis absorption spectroscopy has been employed to investigate the nature of aggregation and exciton bandwidth in the resultant films deposited at the air/liquid interface. Moreover, grazing incidence X-ray diffraction (GIXD) analysis and atomic force microscopy (AFM) reveal the long-range ordering and highly crystalline thin films with the edge-on orientation of polymer chains over the substrate. Furthermore, the impact of aggregation, morphology, and orientation on macroscopic charge transport performance is elaborately estimated by fabricating organic field-effect transistors (OFETs). A hole mobility as high as 0.160 ± 0.007 cm² V^–1 s^–1 has been achieved for a P3HT/MoS₂ (1%) nanocomposite under ambient conditions.

中文翻译：

MoS ₂辅助的自组装聚（3-己基噻吩）薄膜在空气/液体界面上的环境条件下的高性能场效应晶体管

为了在有机电子器件中进行有效的电荷传输，实现π-共轭聚合物的纳米级形态的长程有序是一个关键的挑战。聚（3-己基噻吩）（P3HT）中的长程有序和聚集是通过将二维（2D）二硫化钼（MoS ₂）纳米片引入聚合物基质中，然后在氯仿中进行超声处理来实现的。合成的具有不同分数的MoS _2的P3HT / MoS ₂纳米复合材料薄膜在P3HT基质中，已经在空气/液体界面上制造了这种化合物。紫外可见吸收光谱法已用于研究在气/液界面处沉积的所得薄膜中聚集和激子带宽的性质。此外，掠入射X射线衍射（GIXD）分析和原子力显微镜（AFM）揭示了长程有序和高度结晶的薄膜，其在基材上具有聚合物链的边沿取向。此外，通过制造有机场效应晶体管（OFET）可以精确地估算出聚集，形态和取向对宏观电荷传输性能的影响。P3HT / MoS _2的空穴迁移率高达0.160±0.007 cm ² V ^–1 s ^–1 （1％）纳米复合材料在环境条件下。

更新日期：2020-04-08

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