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Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO3 Epitaxially Interfaced with 5d Perovskites
ACS Omega ( IF 3.7 ) Pub Date : 2020-03-10 , DOI: 10.1021/acsomega.9b03996 Lena Wysocki 1 , Jörg Schöpf 1 , Michael Ziese 2 , Lin Yang 1 , András Kovács 3 , Lei Jin 3 , Rolf B. Versteeg 1 , Andrea Bliesener 1 , Felix Gunkel 4, 5 , Lior Kornblum 6 , Regina Dittmann 4 , Paul H. M. van Loosdrecht 1 , Ionela Lindfors-Vrejoiu 1
ACS Omega ( IF 3.7 ) Pub Date : 2020-03-10 , DOI: 10.1021/acsomega.9b03996 Lena Wysocki 1 , Jörg Schöpf 1 , Michael Ziese 2 , Lin Yang 1 , András Kovács 3 , Lei Jin 3 , Rolf B. Versteeg 1 , Andrea Bliesener 1 , Felix Gunkel 4, 5 , Lior Kornblum 6 , Regina Dittmann 4 , Paul H. M. van Loosdrecht 1 , Ionela Lindfors-Vrejoiu 1
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SrRuO3, a 4d ferromagnet with multiple Weyl nodes at the Fermi level, offers a rich playground to design epitaxial heterostructures and superlattices with fascinating magnetic and magnetotransport properties. Interfacing ultrathin SrRuO3 layers with large spin–orbit coupling 5d transition-metal oxides, such as SrIrO3, results in pronounced peaklike anomalies in the magnetic field dependence of the Hall resistivity. Such anomalies have been attributed either to the formation of Néel-type skyrmions or to modifications of the Berry curvature of the topologically nontrivial conduction bands near the Fermi level of SrRuO3. Here, epitaxial multilayers based on SrRuO3 interfaced with 5d perovskite oxides, such as SrIrO3 and SrHfO3, were studied. This work focuses on the magnetotransport properties of the multilayers, aiming to unravel the role played by the interfaces with 5d perovskites in the peaklike anomalies of the Hall resistance loops of SrRuO3 layers. Interfacing with large band gap insulating SrHfO3 layers did not influence the anomalous Hall resistance loops, while interfacing with the nominally paramagnetic semimetal SrIrO3 resulted in pronounced peaklike anomalies, which have been lately attributed to a topological Hall effect contribution as a result of skyrmions. This interpretation is, however, under strong debate and lately alternative causes, such as inhomogeneity of the thickness and the electronic properties of the SrRuO3 layers, have been considered. Aligned with these latter proposals, our findings reveal the central role played in the anomalies of the Hall resistivity loops by electronic inhomogeneity of SrRuO3 layers due to the interfacing with semimetallic 5d5 SrIrO3.
中文翻译：
电子异质性对与5d钙钛矿外延连接的SrRuO 3异常霍尔电阻率环的影响
SrRuO 3是在费米级具有多个Weyl节点的4d铁磁体，它提供了一个丰富的运动场来设计具有引人入胜的磁和磁传输特性的外延异质结构和超晶格。超薄SrRuO 3层与自旋轨道耦合5d过渡金属氧化物（例如SrIrO 3）的界面连接，导致霍尔电阻率的磁场依赖性出现明显的峰状异常。此类异常归因于Néel型Skyrmion的形成，或归因于SrRuO 3费米能级附近拓扑非平凡导带的Berry曲率的改变。在此，基于SrRuO 3的外延多层研究了与5d钙钛矿氧化物，如SrIrO 3和SrHfO 3的界面。这项工作着眼于多层的磁输运性质，旨在揭示与5d钙钛矿的界面在SrRuO 3层的霍尔电阻环路的峰状异常中的作用。与大带隙绝缘SrHfO 3层的接口不会影响霍尔电阻异常回路，而与名义上顺磁性的半金属SrIrO 3接口导致出现明显的峰状异常，这最近归因于天空虫引起的拓扑霍尔效应贡献。然而，这种解释仍在激烈的辩论中，并且最近考虑了替代原因，例如SrRuO 3层的厚度和电子特性的不均匀性。与后面的这些建议相一致，我们的发现揭示了由于与半金属5d 5 SrIrO 3的界面作用，SrRuO 3层的电子不均匀性在霍尔电阻率回路的异常中发挥了重要作用。
更新日期：2020-03-24
中文翻译：
电子异质性对与5d钙钛矿外延连接的SrRuO 3异常霍尔电阻率环的影响
SrRuO 3是在费米级具有多个Weyl节点的4d铁磁体，它提供了一个丰富的运动场来设计具有引人入胜的磁和磁传输特性的外延异质结构和超晶格。超薄SrRuO 3层与自旋轨道耦合5d过渡金属氧化物（例如SrIrO 3）的界面连接，导致霍尔电阻率的磁场依赖性出现明显的峰状异常。此类异常归因于Néel型Skyrmion的形成，或归因于SrRuO 3费米能级附近拓扑非平凡导带的Berry曲率的改变。在此，基于SrRuO 3的外延多层研究了与5d钙钛矿氧化物，如SrIrO 3和SrHfO 3的界面。这项工作着眼于多层的磁输运性质，旨在揭示与5d钙钛矿的界面在SrRuO 3层的霍尔电阻环路的峰状异常中的作用。与大带隙绝缘SrHfO 3层的接口不会影响霍尔电阻异常回路，而与名义上顺磁性的半金属SrIrO 3接口导致出现明显的峰状异常，这最近归因于天空虫引起的拓扑霍尔效应贡献。然而，这种解释仍在激烈的辩论中，并且最近考虑了替代原因，例如SrRuO 3层的厚度和电子特性的不均匀性。与后面的这些建议相一致，我们的发现揭示了由于与半金属5d 5 SrIrO 3的界面作用，SrRuO 3层的电子不均匀性在霍尔电阻率回路的异常中发挥了重要作用。
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