Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics,The Journal of Physical Chemistry Letters

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Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide Dielectrics
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-03-24 , DOI: 10.1021/acs.jpclett.0c00583
Xiaoci Liang ₁ , Ling Liu ₁ , Guangshuo Cai ₁ , Peng Yang ₁ , Yanli Pei _{1,

2} , Chuan Liu _{1,

3}

Affiliation

In developing low-power electronics, low-voltage transistors have been intensively investigated. One of the most important findings is that some high-k oxide gate dielectrics can lead to remarkable enhancement of apparent mobility in thin-film transistors (TFTs), which is not clearly understood. Here, we investigate InO_x TFTs with solution-processed AlO_x dielectrics. At very low frequencies (<1 Hz), the AlO_x films feature strong voltage-dependent capacitance. Also, cyclic voltammograms show clear features of surface-controlled Faradaic charge transfer. The two independent experiments both point to the formation of pseudocapacitance, which is similar to the mechanism behind some supercapacitors. A physical model including charge transfer is established to describe ion distribution. The charge transfer is probably related to residual hydrogens, as revealed by secondary-ion mass spectroscopy. The results provide direct evidence of the formation of pseudocapacitance in TFTs with high apparent mobilities and advance the understanding of mechanisms, measurements, and applications of such TFTs for low-power electronics.

中文翻译：

具有溶液处理氧化物电介质的高迁移率薄膜晶体管中伪电容和法拉第电荷转移的证据

在开发低功率电子器件时，已经对低压晶体管进行了深入研究。最重要的发现之一是，某些高k氧化物栅极电介质会导致薄膜晶体管（TFT）的表观迁移率显着提高，目前尚不清楚。在这里，我们研究了具有固溶处理的AlO _x电介质的InO _x TFT 。在非常低的频率（<1 Hz）下，AlO _x薄膜具有很强的电压依赖性电容。同样，循环伏安图显示了表面控制的法拉第电荷转移的明显特征。这两个独立的实验均指出了伪电容的形成，这与某些超级电容器背后的机制相似。建立包括电荷转移的物理模型来描述离子分布。次级离子质谱表明，电荷转移可能与残留氢有关。结果提供了在具有高表观迁移率的TFT中伪电容形成的直接证据，并进一步了解了此类TFT在低功率电子设备中的机理，测量和应用。

更新日期：2020-03-24

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