Abstract Vanadium dioxide (VO2), which can initiate an automatic reversible metal-to-insulator transition (MIT) from tetragonal to monoclinic structure at the transition temperature (Tc) of 68 °C, is a promising candidate to realize electronic devices due to its dramatic changes in electrical resistivity through MIT. Moreover, the application of VO2 on modulation devices requires a narrow hysteresis width associated with a significant change in its electronic properties, which is quite challenging in VO2 films fabricated by magnetron sputtering, besides, the high preparation temperature around 400 °C also hinders the further industrial production of VO2 films. In this paper, by adding a simple and easy-to-obtain low-valence vanadium buffer layer between the substrate and the VO2 layer, high performance VO2 films with electrical phase transition close to four orders of magnitude and loop width less than 5 °C are obtained. Meanwhile, the annealing temperature of the fabricating process is decreased to only 320 °C, which is 80 °C lower than the ordinary preparation temperature and significantly reducing energy consumption and manufacturing difficulty. Such enhanced performance will benefit the publicity and application for VO2-based modulation devices.

中文翻译：

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通过嵌入低钒缓冲层低温制备高性能 VO2 薄膜

摘要 二氧化钒 (VO2) 可以在 68 °C 的转变温度 (Tc) 下引发从四方晶向单斜晶结构的自动可逆金属到绝缘体转变 (MIT)，由于其具有通过麻省理工学院的电阻率发生了巨大变化。此外，VO2 在调制器件上的应用需要较窄的滞后宽度与其电子性质的显着变化相关，这在磁控溅射制备的 VO2 薄膜中非常具有挑战性，此外，400 °C 左右的高制备温度也阻碍了进一步的发展。 VO2薄膜的工业生产。本文通过在衬底和VO2层之间加入一个简单易得的低价钒缓冲层，获得了具有接近四个数量级的电相变和小于 5°C 的环路宽度的高性能 VO2 薄膜。同时，制备工艺的退火温度降低到仅320℃，比普通制备温度低80℃，显着降低了能耗和制造难度。这种增强的性能将有利于基于VO2的调制设备的宣传和应用。