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Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2.
ACS Nano ( IF 15.8 ) Pub Date : 2020-03-13 , DOI: 10.1021/acsnano.0c00291 Qi Li 1 , Xiaoxu Zhao 2 , Longjiang Deng 1 , Zhongtai Shi 1 , Sheng Liu 3 , Qilin Wei 4 , Linbo Zhang 1 , Yingchun Cheng 4 , Li Zhang 1 , Haipeng Lu 1 , Weibo Gao 3 , Wei Huang 4 , Cheng-Wei Qiu 5 , Gang Xiang 6 , Stephen John Pennycook 2 , Qihua Xiong 3 , Kian Ping Loh 7 , Bo Peng 1
ACS Nano ( IF 15.8 ) Pub Date : 2020-03-13 , DOI: 10.1021/acsnano.0c00291 Qi Li 1 , Xiaoxu Zhao 2 , Longjiang Deng 1 , Zhongtai Shi 1 , Sheng Liu 3 , Qilin Wei 4 , Linbo Zhang 1 , Yingchun Cheng 4 , Li Zhang 1 , Haipeng Lu 1 , Weibo Gao 3 , Wei Huang 4 , Cheng-Wei Qiu 5 , Gang Xiang 6 , Stephen John Pennycook 2 , Qihua Xiong 3 , Kian Ping Loh 7 , Bo Peng 1
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The "Zeeman effect" offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic doping in TMDs can enhance the Zeeman splitting; however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (geff = -6.4) and 10 K (geff = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective Landé geff factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately 5-fold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.
中文翻译：
掺铁单层MoS2中增强的Valley Zeeman分裂。
“ Zeeman效应”为自旋自由度（DOF）的磁性操纵提供了独特的机会。最近，在液氦温度下的二维过渡金属二卤化二金属锡（TMDs）中已经证明了山谷塞曼分裂，这涉及山谷退化的解除。然而，为了实现谷假自旋的实际应用，谷DOF必须通过室温下的磁场可控，这仍然是一个巨大的挑战。TMD中的磁性掺杂可以增强塞曼分裂。但是，要通过实验实现这一目标并不容易。在这里，我们报道了在CVD生长的掺杂Fe的MoS2单层中，在300 K（geff = -6.4）和10 K（geff = -11）处谷塞曼分裂的明确磁操作；有效的朗德geff系数可调整为-20。如图7所示，通过增加Fe掺杂剂浓度，与未掺杂的MoS 2相比，Fe掺杂剂浓度提高了约5倍。我们的测量和计算表明，增强的分裂和geff因子归因于局部磁矩（Fe 3d电子）与MoS2通过d轨道杂交的海森堡交换相互作用。
更新日期：2020-03-13
中文翻译：
掺铁单层MoS2中增强的Valley Zeeman分裂。
“ Zeeman效应”为自旋自由度（DOF）的磁性操纵提供了独特的机会。最近，在液氦温度下的二维过渡金属二卤化二金属锡（TMDs）中已经证明了山谷塞曼分裂，这涉及山谷退化的解除。然而，为了实现谷假自旋的实际应用，谷DOF必须通过室温下的磁场可控，这仍然是一个巨大的挑战。TMD中的磁性掺杂可以增强塞曼分裂。但是，要通过实验实现这一目标并不容易。在这里，我们报道了在CVD生长的掺杂Fe的MoS2单层中，在300 K（geff = -6.4）和10 K（geff = -11）处谷塞曼分裂的明确磁操作；有效的朗德geff系数可调整为-20。如图7所示，通过增加Fe掺杂剂浓度，与未掺杂的MoS 2相比，Fe掺杂剂浓度提高了约5倍。我们的测量和计算表明，增强的分裂和geff因子归因于局部磁矩（Fe 3d电子）与MoS2通过d轨道杂交的海森堡交换相互作用。
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