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Persistence of Magnetism in Atomically Thin MnPS3 Crystals
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-06 , DOI: 10.1021/acs.nanolett.9b05165 Gen Long 1, 2 , Hugo Henck 1, 2 , Marco Gibertini 1, 3 , Dumitru Dumcenco 1 , Zhe Wang 1, 2 , Takashi Taniguchi 4 , Kenji Watanabe 4 , Enrico Giannini 1 , Alberto F. Morpurgo 1, 2
Nano Letters ( IF 9.6 ) Pub Date : 2020-03-06 , DOI: 10.1021/acs.nanolett.9b05165 Gen Long 1, 2 , Hugo Henck 1, 2 , Marco Gibertini 1, 3 , Dumitru Dumcenco 1 , Zhe Wang 1, 2 , Takashi Taniguchi 4 , Kenji Watanabe 4 , Enrico Giannini 1 , Alberto F. Morpurgo 1, 2
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The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI3 and CrCl3 can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field (H) and temperature (T). This is possible because the spins within each individual layer are ferromagnetically aligned and the tunneling magnetoresistance depends on the relative orientation of the magnetization in adjacent layers. The situation is different for systems that are antiferromagnetic within the layers in which case it is unclear whether magnetoresistance measurements can provide information about the magnetic state. Here, we address this issue by investigating tunnel transport through atomically thin crystals of MnPS3, a van der Waals semiconductor that in the bulk exhibits easy-axis antiferromagnetic order within the layers. For thick multilayers below T ∼ 78 K, a T-dependent magnetoresistance sets in at μ0H ∼ 5 T and is found to track the boundary between the antiferromagnetic and the spin-flop phases known from bulk measurements. We show that the magnetoresistance persists as thickness is reduced with nearly unchanged characteristic temperature and magnetic field scales, albeit with a different dependence on H, indicating the persistence of magnetism in the ultimate limit of individual monolayers.
中文翻译：
原子薄MnPS 3晶体中的磁性持久性
可以通过形成隧道势垒并测量其电阻随磁场（H）和温度（T）的变化来探测原子薄的半导体层状反铁磁体（例如CrI 3和CrCl 3）的磁态。这是可能的，因为每个单独层中的自旋都是铁磁排列的，并且隧道磁阻取决于相邻层中磁化的相对方向。对于在层内为反铁磁性的系统，情况是不同的，在这种情况下，磁阻测量是否可以提供有关磁态的信息尚不清楚。在这里，我们通过研究穿过MnPS原子薄晶体的隧道传输来解决这个问题如图3所示，范德华半导体在层内总体上表现出容易的y轴反铁磁有序。对于低于厚多层Ť〜78 K，一个Ť在μ依赖性磁阻集0 ħ〜5 T和被发现跟踪反铁磁和从大容量测量已知自旋触发器相之间的边界。我们表明，尽管厚度对H的依赖程度不同，但随着厚度的减小，磁电阻将持续存在，尽管对H的依赖性不同，这表明磁在单个单层的极限范围内仍存在。
更新日期：2020-04-24
中文翻译：
原子薄MnPS 3晶体中的磁性持久性
可以通过形成隧道势垒并测量其电阻随磁场（H）和温度（T）的变化来探测原子薄的半导体层状反铁磁体（例如CrI 3和CrCl 3）的磁态。这是可能的，因为每个单独层中的自旋都是铁磁排列的，并且隧道磁阻取决于相邻层中磁化的相对方向。对于在层内为反铁磁性的系统，情况是不同的，在这种情况下，磁阻测量是否可以提供有关磁态的信息尚不清楚。在这里，我们通过研究穿过MnPS原子薄晶体的隧道传输来解决这个问题如图3所示，范德华半导体在层内总体上表现出容易的y轴反铁磁有序。对于低于厚多层Ť〜78 K，一个Ť在μ依赖性磁阻集0 ħ〜5 T和被发现跟踪反铁磁和从大容量测量已知自旋触发器相之间的边界。我们表明，尽管厚度对H的依赖程度不同，但随着厚度的减小，磁电阻将持续存在，尽管对H的依赖性不同，这表明磁在单个单层的极限范围内仍存在。
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