光电FET：由2D和0D纳米材料实现的光电晶体管,ACS Photonics

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光电FET：由2D和0D纳米材料实现的光电晶体管
ACS Photonics ( IF 6.5 ) Pub Date : 2016-11-09 00:00:00 , DOI: 10.1021/acsphotonics.6b00391
Dominik Kufer ₁ , Gerasimos Konstantatos _{1,

2}

Affiliation

依靠光检测技术的日常生活中的各种应用都需要具有独特性能的光检测器。适当的光电检测系统的选择取决于其应用，其中光谱选择性，速度和灵敏度等方面起着至关重要的作用。光电二极管主导着覆盖从紫外线到红外的大光谱范围的高灵敏度光电检测。为了克服现有技术在灵敏度和成本方面的局限性，需要具有低成本制造和高性能的新设备架构和材料系统。低维纳米材料（0D，1D，2D）是具有许多独特的电气和光学特性以及其他功能（如柔韧性和透明度）的有前途的候选材料。从这个角度来看，描述了光电FET（场效应晶体管）的物理机理，并讨论了低维光电FET及其混合器件领域的最新进展。鉴于光子吸收和载流子传输过程，解决了对通道材料的若干要求，并指出了基于单材料的器件之间的基本权衡。我们进一步阐明了由超薄通道和强吸收性半导体敏化而成的混合设备如何克服这些限制并导致新一代高灵敏度光电探测器。讨论了敏化低维光电FET开发的最新进展，并提出了其在高灵敏度光电检测中应用的一些有希望的未来方向。

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Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

The large diversity of applications in our daily lives that rely on photodetection technology requires photodetectors with distinct properties. The choice of an adequate photodetecting system depends on its application, where aspects such as spectral selectivity, speed, and sensitivity play a critical role. High-sensitivity photodetection covering a large spectral range from the UV to IR is dominated by photodiodes. To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new device architectures and material systems are needed with low-cost fabrication and high performance. Low-dimensional nanomaterials (0D, 1D, 2D) are promising candidates with many unique electrical and optical properties and additional functionalities such as flexibility and transparency. In this Perspective, the physical mechanism of photo-FETs (field-effect transistors) is described and recent advances in the field of low-dimensional photo-FETs and hybrids thereof are discussed. Several requirements for the channel material are addressed in view of the photon absorption and carrier transport process, and a fundamental trade-off between them is pointed out for single-material-based devices. We further clarify how hybrid devices, consisting of an ultrathin channel sensitized with strongly absorbing semiconductors, can circumvent these limitations and lead to a new generation of highly sensitive photodetectors. Recent advances in the development of sensitized low-dimensional photo-FETs are discussed, and several promising future directions for their application in high-sensitivity photodetection are proposed.

更新日期：2016-11-09

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