The selenization mechanism of Sn and Zn thin films was investigated by in situ high-temperature X-ray diffraction analysis of glass/Mo/Sn(/Se) and glass/Mo/Zn(/Se) precursors. The Sn and Zn layers were deposited by sputtering, and amorphous Se layer was added by evaporation. Based on the results of isothermal reactions at different set temperatures, the kinetic parameters for the transformation of the SnSe2 to SnSe phases and the selenization of Zn to ZnSe were estimated. It was found that severe Sn loss also occurred during the selenization of glass/Mo/Sn/Se precursor, while Zn loss was relatively negligible during the selenization of glass/Mo/Zn/Se precursor.

中文翻译：

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使用原位高温 X 射线衍射研究 Sn 和 Zn 的硒化机制

通过玻璃/Mo/Sn(/Se) 和玻璃/Mo/Zn(/Se) 前驱体的原位高温X 射线衍射分析研究了Sn 和Zn 薄膜的硒化机制。通过溅射沉积Sn和Zn层，通过蒸发添加非晶Se层。根据不同设定温度下等温反应的结果，估计了 SnSe2 相向 SnSe 相转变和 Zn 硒化为 ZnSe 的动力学参数。发现在玻璃/Mo/Sn/Se前驱体硒化过程中也发生了严重的Sn损失，而在玻璃/Mo/Zn/Se前驱体硒化过程中Zn损失相对可以忽略不计。