Abstract Ambipolar thin-film transistors are fabricated employing p-channel (2-decyl-7-phenylbenzo[b]benzo [4,5]thieno[2,3-d]thiophene; Ph-BTBT-C10) and n-channel (N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide; PTCDI-C8) semiconductors in bilayer and bulk heterojunction architecture. Bilayer organic semiconductors with small thickness of the first layer exhibit ambipolar device characteristics with relatively poor electrical performance. On the other hand, bulk heterojunction organic thin-film transistors (OTFTs) with optimized blend ratio exhibited higher ambipolar charge transport properties with carrier mobility as high as 0.22 and 0.038 cm2 V−1s−1 for hole and electron, respectively. Complementary-like inverters fabricated based on optimized bulk heterojunction OTFTs show high transfer gain of 96.

中文翻译：

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基于有机半导体混合物的双极薄膜晶体管

摘要 采用 p 沟道（2-癸基-7-苯基苯并[b]苯并[4,5]噻吩并[2,3-d]噻吩；Ph-BTBT-C10）和n沟道（ N,N'-di-n-octyl-3,4,9,10-苝四羧酸二酰亚胺；PTCDI-C8) 双层和本体异质结结构的半导体。第一层厚度小的双层有机半导体表现出双极器件特性，电性能相对较差。另一方面，具有优化混合比的体异质结有机薄膜晶体管（OTFT）表现出更高的双极性电荷传输特性，空穴和电子的载流子迁移率分别高达 0.22 和 0.038 cm2 V-1s-1。基于优化的体异质结 OTFT 制造的互补类逆变器显示出 96 的高传输增益。