Both pure silica (SiO₂) nanoparticles (SNPs) and functionalized hybrid thiophene–silica nanoparticles (H-SiO₂-Th NPs) were deposited onto non-functional parylene C films using a novel, readily executed, one-step decoration method. Unlike previously known methods, this functionalization method of parylene C films required neither a binding agent nor sophisticated equipment/devices. The SiO₂-based NPs anchored on parylene C substrates were formed via a common base-catalyzed hydrolytic sol-gel method. Regarding the mechanism, it has been assumed that the SiO₂ phase precursor (Si(OEt)₄, tetraethyl orthosilicate (TEOS), was first adsorbed and 2D polymerized onto the parylene C film due to hydrophobic interactions that served as an anchor mechanism for further NP growth. This assumption was investigated by comparing thermal behaviors (measured by differential scanning calorimetry, DSC) of parylene C coatings before and after the following specific surface treatment, i.e., (i) first parylene C coating incubation with TEOS followed by (ii) SNP formation and growth from such a TEOS-modified coating surface. Following the same procedure, hybrid thiophene-containing H-SiO₂-Th NPs were also successfully grown from the surface of a TEOS-modified parylene C film and characterized using high-resolution scanning electron microscopy (HR-SEM) and X-ray photoelectron spectroscopy (XPS). In order to obtain deeper insight into the overall functionalization process, the similar hybrid H-SiO₂-Th NPs that formed in the bulk contacting medium were also isolated and fully characterized for comparison needs.

使用新颖，易于执行的一步式装饰方法，将纯二氧化硅（SiO ₂）纳米颗粒（SNP）和功能化杂化噻吩-二氧化硅纳米颗粒（H-SiO ₂ -Th NPs）沉积到非功能聚对二甲苯C膜上。与先前已知的方法不同，这种聚对二甲苯C膜的功能化方法既不需要粘合剂也不需要复杂的设备/装置。锚固在聚对二甲苯C基底上的基于SiO ₂的NPs是通过常见的碱催化水解溶胶-凝胶法形成的。关于机理，已经假定SiO ₂相前体（Si（OEt）₄首先，由于疏水相互作用，原硅酸四乙酯（TEOS）首先被吸附并二维聚合到聚对二甲苯C膜上，该相互作用充当了进一步NP生长的锚定机制。通过比较以下特定表面处理之前和之后聚对二甲苯C涂层的热性能（通过差示扫描量热法（DSC）测量），研究了这一假设，即（i）首先将聚对二甲苯C涂层与TEOS一起孵育，然后（ii）形成SNP和从这种TEOS改性的涂层表面生长。按照相同的步骤，混合的含噻吩的H-SiO ₂-Th NPs也成功地从TEOS改性的聚对二甲苯C膜的表面生长出来，并使用高分辨率扫描电子显微镜（HR-SEM）和X射线光电子能谱（XPS）进行了表征。为了更深入地了解整个功能化过程，还对形成在本体接触介质中的类似杂化H-SiO ₂ -Th NP进行了分离，并进行了充分表征，以进行比较。