Ni1-xSrxO纳米结构中的介电弛豫和跳跃传导机制,Materials Chemistry and Physics

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Ni1-xSrxO纳米结构中的介电弛豫和跳跃传导机制
Materials Chemistry and Physics ( IF 4.3 ) Pub Date : 2020-01-01 , DOI: 10.1016/j.matchemphys.2019.121959
M. Naseem Siddique , Ateeq Ahmed , P. Tripathi

摘要通过直流和交流传导测量系统地研究了溶胶-凝胶制备的 Ni1-xSrxO (x = 0.00, 0.02, 0.04) 纳米结构的电传输和传导特性。已经使用 X 射线衍射精修和透射电子显微镜 (TEM) 分析研究了样品的相纯度和结构。观察到金属到半导体的转变发生在纯 NiO 样品中，而在 Sr 插入 NiO 晶格时被抑制。已发现 DC 传导的活化能 (Ea) 介于 0.18 和 0.49 meV 之间。此外，我们还观察到掺杂 NiO 样品中的弛豫过程，这是由介电常数的峰值行为建立的。讨论传导机制，已经使用基于量子力学隧道效应的非重叠小极化子 (NSPT) 模型分析了频率指数“n”的交流电导率和温度依赖性。同时，使用与NSPT模型相关的AC电导率数据计算最大势垒高度（结合能）（Wm）、AC活化能、隧穿距离（Rw）和费米能级N（EF）的态密度值。此外，阻抗谱表明纯样品和 Sr 掺杂样品在 30°C 和 150°C 的温度下表现出高阶绝缘行为。隧道距离 (Rw) 和费米能级 N (EF) 的态密度。此外，阻抗谱表明纯样品和 Sr 掺杂样品在 30°C 和 150°C 的温度下表现出高阶绝缘行为。隧道距离 (Rw) 和费米能级 N (EF) 的态密度。此外，阻抗谱表明纯样品和 Sr 掺杂样品在 30°C 和 150°C 的温度下表现出高阶绝缘行为。

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Dielectric Relaxation and Hopping Conduction Mechanism in Ni1-xSrxO Nanostructures

Abstract Electrical transport and conduction characteristics of sol-gel prepared Ni1-xSrxO (x = 0.00, 0.02, 0.04) nanostructures have been investigated systematically through DC and AC conduction measurements. The phase purity and structure of the samples have been studied using X-ray diffraction refinement and transmission electron microscope (TEM) analysis. It is observed that metal to semiconductor transition takes place in pure NiO sample whereas, it is suppressed on Sr insertion into NiO lattice. The activation energy (Ea) of the DC conduction have been found between 0.18 and 0.49 meV. Further, we have also observed relaxation process in doped NiO samples which are established by peaking behavior of dielectric constant. To discuss the conduction mechanism, the AC conductivity and temperature dependence of frequency exponent ‘n’ have been analysed using quantum mechanical tunnelling based Non-Overlapping Small Polaron (NSPT) model. Simultaneously, correlated AC conductivity data with NSPT model was used to calculate the value of maximum barrier height (binding energy) (Wm), AC activation energy, tunnelling distance (Rw) and density of states at Fermi level N (EF). Also, impedance spectroscopy suggests that the pure and Sr doped samples exhibit high order insulating behavior at the temperatures of 30 °C and 150 °C.

更新日期：2020-01-01

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