Abstract This paper describes the preparation of multi-walled carbon nanotube chalcogenide glasses alloys [(Se80Te20)100-x(CNT)x] (x = 2 and 10) by melt quenching technique and were characterized with XRD, SEM, Raman, electrical and dielectric measurements. An XRD measurement reveals the amorphous nature of the prepared samples. The SEM and Raman study confirm the presence of CNT in SeTe alloy. The diffused prime Raman bands (G and D) have been appeared for MWCNT/SeTe glassy alloy. The current versus voltage (I V) characteristics and DC conductivity measurement were carried out. The rapid increase in electrical conductivity by several order of magnitude from 10−10 Ω−1 cm−1 to 10−3 Ω−1 cm−1 for 2% and 10% MWCNT/SeTe chalcogenide semiconductor were observed. Such significant increase in electrical conductivity for CNT doped glassy alloy may be due highly conducting nature of CNT. The effect is explained on the basis of conductive path which create percolation network in MWCNT/SeTe glassy alloys. The dielectric parameters were studied in the temperature range of 300–370 K and in the frequency range of 500 Hz–1 MHz. Dielectric dispersion are observed and the results are explained on the basis of dipolar type of dielectric dispersion and DC conduction losses.

中文翻译：

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CNT掺杂的SeTe玻璃合金的结构、电学和介电性能

摘要 本文介绍了采用熔融淬火技术制备多壁碳纳米管硫属化物玻璃合金 [(Se80Te20)100-x(CNT)x] (x = 2 和 10)，并用 XRD、SEM、拉曼、电学和介电测量。XRD 测量揭示了所制备样品的无定形性质。SEM 和拉曼研究证实了 SeTe 合金中存在 CNT。MWCNT/SeTe 玻璃合金出现了扩散的主要拉曼谱带（G 和 D）。进行了电流对电压 (IV) 特性和 DC 电导率的测量。观察到 2% 和 10% MWCNT/SeTe 硫族化物半导体的电导率从 10-10 Ω-1 cm-1 到 10-3 Ω-1 cm-1 的几个数量级迅速增加。CNT掺杂的玻璃合金的电导率的这种显着增加可能是由于CNT的高导电性。该效应基于在 MWCNT/SeTe 玻璃合金中产生渗透网络的导电路径进行解释。在 300–370 K 的温度范围和 500 Hz–1 MHz 的频率范围内研究了介电参数。观察介电色散并根据偶极型介电色散和直流传导损耗解释结果。