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High‐Tg porous polyimide films with low dielectric constant derived from spiro‐(adamantane‐2,9′(2′,7′‐diamino)‐fluorene)
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2018-11-25 , DOI: 10.1002/app.47313
Pengxia Lv 1, 2 , Zhixin Dong 1 , Xuemin Dai 1 , Xuepeng Qiu 1
Affiliation  

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high‐performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl‐adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross‐sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass‐transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl‐adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as‐prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019, 136, 47313.

中文翻译:

螺-(金刚烷-2,9'(2',7'-二氨基)-芴)衍生的低介电常数的高Tg多孔聚酰亚胺薄膜

具有低介电常数和优异热性能的多孔聚酰亚胺(PI)膜一直是下一代高性能,微型化和超薄微电子器件的迫切需求。通过热解添加到PI基质中的聚乙二醇(PEG),成功制备了一系列含有芴基-金刚烷基团的新型多孔PI膜。多孔PI薄膜的横截面形貌显示出直径在135至158 nm之间的封闭孔,这些孔均匀且规则,没有互连。这些多孔PI膜在376°C的玻璃化转变温度下表现出出色的热性能,而由于芴基-金刚烷基团提供的增强的刚性,在空气中5%的失重温度超过405°C。伴随着PEG的热解含量从0增加到20wt%,多孔PI膜的密度降低,并且相应的孔隙率从0增加到11.48%。取决于孔隙率,多孔PI薄膜的介电常数和介电损耗分别从2.89降至2.37和从0.050降至0.021。这些优异的性能使所制备的多孔PI薄膜受益于微电子领域中的层间电介质,集成电路芯片或多芯片模块。©2018 Wiley Periodicals,Inc.J.应用 Polym。科学 分别为021。这些优异的性能使所制备的多孔PI薄膜受益于微电子领域中的层间电介质,集成电路芯片或多芯片模块。©2018 Wiley Periodicals,Inc.J.应用 Polym。科学 分别为021。这些优异的性能使所制备的多孔PI薄膜受益于微电子领域中的层间电介质,集成电路芯片或多芯片模块。©2018 Wiley Periodicals,Inc.J.应用 Polym。科学2019136,47313。
更新日期:2018-11-25
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