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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)
Advanced Materials ( IF 27.4 ) Pub Date : 2018-04-06 , DOI: 10.1002/adma.201870100 Xiaolong Zhao 1, 2 , Jun Ma 3, 4 , Xiangheng Xiao 2 , Qi Liu 1, 4, 5 , Lin Shao 6 , Di Chen 7 , Sen Liu 1 , Jiebin Niu 1, 4, 5 , Xumeng Zhang 1, 4 , Yan Wang 1 , Rongrong Cao 1, 4 , Wei Wang 1 , Zengfeng Di 3 , Hangbing Lv 1, 4, 5 , Shibing Long 1, 4, 5 , Ming Liu 1, 4, 5
Advanced Materials ( IF 27.4 ) Pub Date : 2018-04-06 , DOI: 10.1002/adma.201870100 Xiaolong Zhao 1, 2 , Jun Ma 3, 4 , Xiangheng Xiao 2 , Qi Liu 1, 4, 5 , Lin Shao 6 , Di Chen 7 , Sen Liu 1 , Jiebin Niu 1, 4, 5 , Xumeng Zhang 1, 4 , Yan Wang 1 , Rongrong Cao 1, 4 , Wei Wang 1 , Zengfeng Di 3 , Hangbing Lv 1, 4, 5 , Shibing Long 1, 4, 5 , Ming Liu 1, 4, 5
Affiliation
In article number 1705193, Qi Liu, Zengfeng Di, Ming Liu, and co‐workers break the typical current‐retention dilemma in cation‐based resistive switching (RS) devices for the first time by centralizing/decentralizing the conductive‐filament distribution to bidirectionally modulate the conductivefilament stability. Both a fast RS selector, with high on‐state current, and low‐power‐dissipation memory are observed for a one selector‐one resistor (1S1R) memory array, which is considered as the most possible practical application scheme for high‐density 3D integration of resistiveswitching random access memory (RRAM).
中文翻译:
电阻式开关:利用具有受控缺陷的石墨烯,打破基于阳离子的电阻式开关器件的电流保持难题(Adv。Mater。14/2018)
在文章1705193中,刘琦,狄增峰,刘明和同事们首次通过将导电丝分布集中/分散到双向,打破了基于阳离子的电阻开关(RS)设备中典型的电流保持难题。调节导电丝的稳定性。对于一个选择器-一个电阻器(1S1R)存储阵列,可以观察到具有高导通电流的快速RS选择器和低功耗存储,这被认为是高密度3D的最实际应用方案电阻切换随机存取存储器(RRAM)的集成。
更新日期:2018-04-06
中文翻译:
电阻式开关:利用具有受控缺陷的石墨烯,打破基于阳离子的电阻式开关器件的电流保持难题(Adv。Mater。14/2018)
在文章1705193中,刘琦,狄增峰,刘明和同事们首次通过将导电丝分布集中/分散到双向,打破了基于阳离子的电阻开关(RS)设备中典型的电流保持难题。调节导电丝的稳定性。对于一个选择器-一个电阻器(1S1R)存储阵列,可以观察到具有高导通电流的快速RS选择器和低功耗存储,这被认为是高密度3D的最实际应用方案电阻切换随机存取存储器(RRAM)的集成。