在第27页的C.-L. Liu W.C. Chen和他的同事报告了“双浮栅”，“双极电荷载流子俘获”和“离散俘获位点”的第一种组合，以使用单结的异质结构生产高性能有机非易失性晶体管存储器件。晶体C 60针/ CuPc纳米粒子。该器件具有宽阔的存储窗口（约4.4 V），低功耗（±5 V内），可接受的保持时间（约104 s）和耐久性（约100个周期）以及双极性（空穴/电子）捕获特性。
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Organic Field‐Effect Transistors: Single‐Crystal C60 Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices (Adv. Mater. 1/2015)
On page 27, C.‐L. Liu, W.‐C. Chen, and co‐workers report the first combination of “double floating‐gate”, “ambipolar charge‐carrier trapping”, and “discrete trapping sites” to produce high‐performance organic non‐volatile transistor memory devices using a heterostructure of single‐crystal C60 needles/CuPc nanoparticles. The devices exhibit a wide memory window (ca. 4.4 V), low power consumption (within ±5 V), acceptable retention (ca. 104 s) and endurance (ca. 100 cycles), and ambipolar (hole/electron) trapping characteristics.
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