Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers.

中文翻译：

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Ir/SrTiO3/Si (001) 上的金刚石：从连续材料表征到横向肖特基二极管的制造

在 Ir/STO/Si (001) 衬底上的金刚石异质外延的不同阶段，使用组合分析工具进行了高级表征。HRTEM 和 STEM-EELS 揭示了在偏置增强成核后存在外延纳米金刚石晶体。紫外拉曼允许在异质外延生长的早期阶段估计金刚石薄膜的质量及其应变。通过 XRD 和 CL 研究确定厚异质外延膜内的晶体结构和应变。横截面的 CL 研究提供了沿生长方向的位错网络的映射。在厚金刚石薄膜上制造的横向肖特基二极管上进行的测量表明，在肖特基势垒高度与在同质外延层上获得的高度一致的基板上具有出色的再现性。