Spin-Valley Locking Effect in Defect States of Monolayer MoS2.,Nano Letters

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Spin-Valley Locking Effect in Defect States of Monolayer MoS2.
Nano Letters ( IF 9.6 ) Pub Date : 2020-02-24 , DOI: 10.1021/acs.nanolett.0c00138
Yaqian Wang _{1,

2} , Longjiang Deng _{1,

2} , Qilin Wei ₃ , Yi Wan ₄ , Zhen Liu _{1,

2} , Xiao Lu _{1,

2} , Yue Li _{1,

2} , Lei Bi _{1,

2} , Li Zhang _{1,

2} , Haipeng Lu _{1,

2} , Haiyan Chen _{1,

2} , Peiheng Zhou _{1,

2} , Linbo Zhang _{1,

2} , Yingchun Cheng ₃ , Xiaoxu Zhao ₅ , Yu Ye ₄ , Wei Huang ₃ , Stephen John Pennycook ₅ , Kian Ping Loh ₆ , Bo Peng _{1,

2}

Affiliation

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

中文翻译：

单层MoS2缺陷状态中的自旋谷锁定效应。

二维（2D）过渡金属双金属双金属卤化物（TMDs）中的谷假自旋可对自旋谷极化和intervalley量子相干性进行光学控制。TMD中的缺陷状态会引起新的激子特征，并且在理论上表现出自旋谷极化。然而，实验上实现这一现象仍然是挑战。在这里，我们报道了在CVD生长的单层MoS2中缺陷结合的局部激子的明确的谷假自旋。观察到有效的g因子为-6.2的增强的山谷塞曼分裂。我们的研究结果表明，所有五个d轨道和有效电子质量的增加都对缺陷态的能带移动做出了贡献，这证明了与缺陷结合的局部激子的磁响应的新物理学，与A激子的显着不同。

更新日期：2020-02-24

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