Development of Indium-Tin Oxide Diffusion Barrier for Attaining High Reliability of Skutterudite Modules,ACS Applied Energy Materials

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Development of Indium-Tin Oxide Diffusion Barrier for Attaining High Reliability of Skutterudite Modules
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-02-20 00:00:00 , DOI: 10.1021/acsaem.0c00100
Yeongseon Kim _{1,

2} , Ho Seong Lee ₃ , Giwan Yoon ₁ , Sang Hyun Park ₂

Affiliation

Thermoelectric (TE) modules that operate at an intermediate-temperature range (600–900 K) inevitably face reliability issues during their operation when subjected to prolonged thermal cycling or due to the aging of the materials. To maintain the sustained performance of TE modules, antiaging techniques such as antioxidation coating and vacuum packaging are necessary. Metallization is one of the key technologies for fabricating highly reliable TE modules because the resulting metal layer can serve as a diffusion barrier preventing an elemental diffusion. Herein, indium-tin oxide (ITO) was investigated as a diffusion barrier for skutterudite (SKD); the compound has high conductivity compared to other oxides and low reactivity compared to metals. Ti/ITO/SKD-structured TE legs were fabricated by co-sintering using a spark plasma sintering system. The ITO layer was found to considerably suppress elemental diffusion by forming Ti–O bonding at the interface. The electrical contact resistance was also maintained at a low level both before and after the thermal aging. An eight-couple TE module was used to verify the reliability of the as-synthesized SKD module. The maximum power density of the Ti/ITO/SKD module was found to be approximately 1 W/cm². A thermal cycling test, run for 500 cycles, was conducted for both Ti/SKD and Ti/ITO/SKD structures. It confirmed that the power output of the Ti/ITO/SKD-structured module is maintained, while the power output of the Ti/SKD-structured module decreased 1% after the thermal cycling. In conclusion, the as-developed TE module, owing to its high durability and reliability, was successfully fabricated.

中文翻译：

用于实现方钴矿组件高可靠性的铟锡氧化物扩散阻挡层的开发

在较长的热循环或材料老化的情况下，在中间温度范围（600–900 K）下运行的热电（TE）模块不可避免地会遇到可靠性问题。为了保持TE模块的持续性能，必须采用抗老化技术，例如抗氧化涂层和真空包装。金属化是制造高度可靠的TE模块的关键技术之一，因为所得的金属层可以用作防止元素扩散的扩散阻挡层。在此，研究了铟锡氧化物（ITO）作为方钴矿（SKD）的扩散阻挡层。与其他氧化物相比，该化合物具有较高的电导率，与金属相比，具有较低的反应性。Ti / ITO / SKD结构的TE焊脚是通过使用火花等离子体烧结系统进行共烧结而制成的。发现ITO层通过在界面处形成Ti-O键大大抑制了元素扩散。在热老化之前和之后，电接触电阻也保持在低水平。使用八对TE模块来验证合成的SKD模块的可靠性。发现Ti / ITO / SKD模块的最大功率密度约为1 W / cm²。对Ti / SKD和Ti / ITO / SKD结构均进行了500个循环的热循环测试。确认了保持了Ti / ITO / SKD结构的模块的功率输出，而经过热循环后，Ti / SKD结构的模块的功率输出降低了1％。总之，由于其高耐久性和可靠性，已成功制造出了已开发的TE模块。

更新日期：2020-02-20

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