Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors,Advanced Functional Materials

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Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-02-16 , DOI: 10.1002/adfm.201910713
Quanshan Lv _{1,

2} , Faguang Yan _{1,

2} , Nobuya Mori ₃ , Wenkai Zhu _{1,

2} , Ce Hu _{1,

2} , Zakhar R. Kudrynskyi ₄ , Zakhar D. Kovalyuk ₅ , Amalia Patanè ₄ , Kaiyou Wang _{1,

2,

6}

Affiliation

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone‐centered conduction and valence bands, and a type II band offset, both ideally suited for band‐to‐band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 10⁸ and negative differential resistance at low applied voltages (V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.

中文翻译：

范德华BP / InSe场效应晶体管中的层间带间隧穿和负微分电阻

范德华（vdW）晶体的原子薄层为实现隧道场效应晶体管（TFET）提供了理想的材料平台，该隧道场效应晶体管利用电荷载流子在vdW异质结的禁止间隙中的隧穿。这种类型的设备需要对结的不同层进行精确的能带对准，以优化隧道电流。在2D vdW材料中，黑磷（BP）和硒化铟（InSe）具有以布里渊区为中心的导带和价带，以及II型带偏移，两者均非常适合带间隧穿。演示了基于BP / InSe异质结的TFET，具有多种电传输特性：正向整流，齐纳隧穿，在具有不同厚度的BP层的BP / InSe结中，或通过对结进行静电门控，可以实现反向整流特性。静电门控可产生高达10的大开/关电流比⁸在低和负微分电阻施加的电压（V ≈0.2 V）。这些发现说明了基于BP和InSe的TFET的通用功能，为这些2D材料的应用提供了超越当前文献报道的器件架构的机会。

更新日期：2020-04-14

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