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Room Temperature Commensurate Charge Density Wave on Epitaxially Grown Bilayer 2H-Tantalum Sulfide on Hexagonal Boron Nitride.
ACS Nano ( IF 15.8 ) Pub Date : 2020-02-12 , DOI: 10.1021/acsnano.0c00303 Wei Fu 1, 2 , Jingsi Qiao 2 , Xiaoxu Zhao 3 , Yu Chen 4 , Deyi Fu 2 , Wei Yu 1 , Kai Leng 1 , Peng Song 1 , Zhi Chen 1 , Ting Yu 4 , Stephen J Pennycook 3 , Su Ying Quek 2, 5 , Kian Ping Loh 1, 2
ACS Nano ( IF 15.8 ) Pub Date : 2020-02-12 , DOI: 10.1021/acsnano.0c00303 Wei Fu 1, 2 , Jingsi Qiao 2 , Xiaoxu Zhao 3 , Yu Chen 4 , Deyi Fu 2 , Wei Yu 1 , Kai Leng 1 , Peng Song 1 , Zhi Chen 1 , Ting Yu 4 , Stephen J Pennycook 3 , Su Ying Quek 2, 5 , Kian Ping Loh 1, 2
Affiliation
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The breaking of multiple symmetries by periodic lattice distortion at a commensurate charge density wave (CDW) state is expected to give rise to intriguing interesting properties. However, accessing the commensurate CDW state on bulk TaS2 crystals typically requires cryogenic temperatures (77 K), which precludes practical applications. Here, we found that heteroepitaxial growth of a 2H-tantalum disulfide bilayer on a hexagonal-boron nitride (h-BN) substrate produces a robust commensurate CDW order at room temperature, characterized by a Moiré superlattice of 3 × 3 TaS2 on a 4 × 4 h-BN unit cell. The CDW order is confirmed by scanning transmission electron microscopy and Raman measurements. Theoretical calculations reveal that the stabilizing energy for the CDW phase of the monolayer and bilayer 2H-TaS2-on-h-BN substrates arises primarily from interfacial electrostatic interactions and, to a lesser extent, interfacial strain. Our work shows that engineering interfacial electrostatic interactions in an ultrathin van der Waals heterostructure constitutes an effective way to enhance CDW order in two-dimensional materials.
中文翻译：
六方氮化硼上外延生长的双层2H-硫化钽上的室温相应电荷密度波。
预期在相应的电荷密度波（CDW）状态下，周期性晶格畸变会破坏多个对称性，从而产生令人感兴趣的有趣特性。但是，在大块TaS2晶体上进入相称的CDW状态通常需要低温（77 K），这妨碍了实际应用。在这里，我们发现六方氮化硼（h-BN）衬底上2H钽二硫化物双层的异质外延生长在室温下产生了稳健的相称CDW阶，其特征是在4×上的Moiré超晶格为3×3 4 h-BN晶胞。通过扫描透射电子显微镜和拉曼测量来确认CDW顺序。理论计算表明，单层和双层2H-TaS2-on-h-BN衬底的CDW相的稳定能主要来自界面静电相互作用，而在较小程度上源自界面应变。我们的工作表明，超薄范德华异质结构中的工程界面静电相互作用是增强二维材料中CDW有序性的有效方法。
更新日期：2020-02-12
中文翻译：
六方氮化硼上外延生长的双层2H-硫化钽上的室温相应电荷密度波。
预期在相应的电荷密度波（CDW）状态下，周期性晶格畸变会破坏多个对称性，从而产生令人感兴趣的有趣特性。但是，在大块TaS2晶体上进入相称的CDW状态通常需要低温（77 K），这妨碍了实际应用。在这里，我们发现六方氮化硼（h-BN）衬底上2H钽二硫化物双层的异质外延生长在室温下产生了稳健的相称CDW阶，其特征是在4×上的Moiré超晶格为3×3 4 h-BN晶胞。通过扫描透射电子显微镜和拉曼测量来确认CDW顺序。理论计算表明，单层和双层2H-TaS2-on-h-BN衬底的CDW相的稳定能主要来自界面静电相互作用，而在较小程度上源自界面应变。我们的工作表明，超薄范德华异质结构中的工程界面静电相互作用是增强二维材料中CDW有序性的有效方法。
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