We demonstrate a GaN:Eu,O-based resonant-cavity light emitting diode (RCLED) fabricated with a n-type conductive Al_0.82In_0.18N/GaN bottom-distributed Bragg reflector (DBR) and a ZrO₂/SiO₂ top-DBR and made in order to manipulate both the radiative transition probability of Eu³⁺ ions and the light extraction efficiency. Shortening of the lifetime of Eu-related luminescence, along with an improved directionality of the light output, is observed from the RCLED. These factors lead to a 4.8 times enhancement of the output power at room temperature as well as a peak enhancement of the electroluminescence intensity of 10.9 as compared to a conventional GaN:Eu,O-based LED. This is the first demonstration of the red RCLED based on rare-earth-doped GaN and enables a significant enhancement of Eu luminescence of the GaN:Eu,O-based red LED with a high color purity and temperature insensitive emission wavelength.

中文翻译：

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具有导电AlInN / GaN分布布拉格反射器的GaN：Eu，O基谐振腔发光二极管

我们展示了一种GaN：Eu，O基谐振腔发光二极管（RCLED），该二极管由n型导电Al _0.82 In _0.18 N / GaN底部分布的布拉格反射器（DBR）和ZrO ₂ / SiO ₂顶部-为了同时控制Eu ³⁺的辐射跃迁几率而制成离子和光提取效率。从RCLED观察到与Eu有关的发光寿命缩短，并且光输出的方向性得到改善。与传统的基于GaN：Eu，O的LED相比，这些因素导致室温下输出功率提高4.8倍，电致发光强度达到峰值10.9。这是基于稀土掺杂GaN的红色RCLED的首次演示，它可以显着增强GaN：Eu，O基GaN的红色LED的Eu发光，具有高色纯度和对温度不敏感的发射波长。