In this work, we have explored the use of a third species during chemical vapor deposition (CVD) to direct thin-film growth to occur exclusively on one surface in the presence of another. Using a combination of density functional theory (DFT) calculations and experiments, including in situ surface analysis, we have examined the use of 4-octyne as a coadsorbate in the CVD of ZrO2 thin films on SiO2 and Cu surfaces. At sufficiently high partial pressures of the coadsorbate and sufficiently low substrate temperatures, we find that 4-octyne can effectively compete for adsorption sites, blocking chemisorption of the thin-film precursor, Zr[N(CH3C2H5)]4, and preventing growth on Cu, while leaving growth unimpeded on SiO2. The selective dielectric-on-dielectric (DoD) process developed herein is fast, totally vapor phase, and does not negatively alter the composition or morphology of the deposited thin film. We argue that this approach to area-selective deposition (ASD) should be widely applicable, provided that suitable candidates for preferential binding can be identified.

中文翻译：

---

竞争性吸附是区域选择性沉积的一种途径。

在这项工作中，我们探索了在化学气相沉积（CVD）期间使用第三种物质来指导薄膜生长仅在一个表面上存在另一个表面的情况。结合使用密度泛函理论（DFT）计算和实验（包括原位表面分析），我们研究了4-辛炔在SiO2和Cu表面ZrO2薄膜的CVD中作为共吸附物的用途。在共吸附物的分压足够高且底物温度足够低的情况下，我们发现4-辛炔可以有效竞争吸附位点，阻止薄膜前体Zr [N（CH3C2H5）] 4的化学吸附，并阻止Cu上的生长，而不会阻碍SiO2的生长。本文开发的选择性介电介质（DoD）工艺是快速的，完全汽相的，并且不会不利地改变沉积薄膜的组成或形态。我们认为，这种方法对区域选择性沉积（ASD）应该是广泛适用的，只要可以确定合适的优先绑定候选人。