Abstract An ultraviolet (UV) photodetector was fabricated by depositing single wall carbon nanotubes (SWCNTs) on the surface of a graphene field-effect transistor (GFET) with buried gate electrode structure. A photoresponsivity with a value as high as 204.5 A/W was obtained under a 365-nm LED light illumination with an incident power of 3.9 μW. The photoresponsivity of our photodetector is about four orders higher in magnitude than that of a recently reported UV photodetector, which is based on CNTs/graphene hybrid films with a photoresponsivity of 2.3 × 10−2 A/W. With increasing the source-drain voltage of the SWCNTs modified GFET, the photoresponsivity can be further enhanced. In addition, the photoresponsivity can also be tuned by applying a small gate voltage. This work provides a simple and feasible method to create highly sensitive UV photodetectors based on all-carbon hybrid films, which are important in many applications such as military surveillance, biomedical instrumentation and environmental monitoring.

中文翻译：

---

基于单壁碳纳米管-石墨烯混合薄膜的高灵敏度紫外光电探测器

摘要 通过在具有掩埋栅电极结构的石墨烯场效应晶体管 (GFET) 表面沉积单壁碳纳米管 (SWCNT) 来制造紫外 (UV) 光电探测器。在入射功率为 3.9 μW 的 365 nm LED 光照射下获得了高达 204.5 A/W 的光响应度。我们的光电探测器的光响应度比最近报道的紫外光电探测器高四个数量级，后者基于碳纳米管/石墨烯混合薄膜，光响应度为 2.3 × 10-2 A/W。随着单壁碳纳米管改性 GFET 的源漏电压的增加，光响应性可以进一步提高。此外，还可以通过施加小的栅极电压来调整光响应性。