Two dimensional materials have promising benefits in photoelectronic devices, including facilitating charge transport and reducing defects in perovskite solar cells (PSCs) and photodetectors (PDs) through interface engineering. Herein, a two dimension polymeric material of graphitic carbon nitride quantum dots (g-CNQDs) interlayer is used to modify the SnO₂/perovskite interface in both ambient PSCs and PDs to improve the overall performance. The introduction of g-CNQD layer improves the crystalline quality of sequential perovskite absorber with high phase purity, less grain boundaries, low trap states and suppressed carrier recombination due to the intrinsic cross-linkable feature and relatively smooth surface of g-CNQD. As a result, with optimal modification, fully air-processed PSC reached a champion power conversion efficiency of 21.23% with negligible hysteresis, and the PDs had remarkable performance enhancement. Moreover, our PSCs have good stability in ambient air, keeping over 90% of the initial efficiency after 30 days’ exposure.

二维材料在光电设备中具有可观的好处，包括通过界面工程促进电荷传输并减少钙钛矿太阳能电池（PSC）和光电探测器（PD）中的缺陷。在此，使用石墨碳氮化物量子点（g-CNQDs）夹层的二维聚合物材料来改性SnO _2。/钙钛矿在环境PSC和PD中的接口可改善整体性能。g-CNQD层的引入提高了顺序钙钛矿吸收剂的晶体质量，由于其固有的可交联特性和相对光滑的g-CNQD表面，具有较高的相纯度，较少的晶界，较低的陷阱态和抑制的载流子复合。结果，通过最佳修改，完全空气处理的PSC达到了21.23％的最佳功率转换效率，而滞后作用却可以忽略不计，并且PD具有显着的性能提升。此外，我们的PSC在环境空气中具有良好的稳定性，在暴露30天后，可保持超过90％的初始效率。