Improving charge mobility in quantum dot (QD) films is important for the performance of photodetectors, solar cells and light-emitting diodes. However, these applications also require preservation of well defined QD electronic states and optical transitions. Here, we present HgTe QD films that show high mobility for charges transported through discrete QD states. A hybrid surface passivation process efficiently eliminates surface states, provides tunable air-stable n and p doping and enables hysteresis-free filling of QD states evidenced by strong conductance modulation. QD films dried at room temperature without any post-treatments exhibit mobility up to μ ~ 8 cm² V⁻¹ s⁻¹ at a low carrier density of less than one electron per QD, band-like behaviour down to 77 K, and similar drift and Hall mobilities at all temperatures. This unprecedented set of electronic properties raises important questions about the delocalization and hopping mechanisms for transport in QD solids, and introduces opportunities for improving QD technologies.

提高量子点 (QD) 薄膜中的电荷迁移率对于光电探测器、太阳能电池和发光二极管的性能非常重要。然而，这些应用还需要保存明确定义的 QD 电子状态和光学跃迁。在这里，我们展示了 HgTe QD 薄膜，该薄膜显示出通过离散 QD 状态传输的电荷的高迁移率。混合表面钝化工艺有效地消除了表面状态，提供了可调节的空气稳定 n 和 p 掺杂，并实现了强电导调制证明的 QD 状态的无滞后填充。在室温下干燥而没有任何后处理的量子点薄膜表现出高达μ  ~ 8 cm ²  V ^-1  s ^{-1的迁移率}在每个 QD 小于一个电子的低载流子密度，低至 77 K 的带状行为，以及在所有温度下类似的漂移和霍尔迁移率。这组前所未有的电子特性提出了关于量子点固体中传输的离域和跳跃机制的重要问题，并为改进量子点技术带来了机会。