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Influence of Al doping on the crystal structure, optical properties, and photodetecting performance of ZnO film
Progress in Natural Science: Materials International ( IF 4.8 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.pnsc.2020.01.006 Ni'matul Azizah , Shibghatullah Muhammady , Muhammad Abiyyu Kenichi Purbayanto , Eka Nurfani , Toto Winata , Euis Sustini , Rena Widita , Yudi Darma
Progress in Natural Science: Materials International ( IF 4.8 ) Pub Date : 2020-02-01 , DOI: 10.1016/j.pnsc.2020.01.006 Ni'matul Azizah , Shibghatullah Muhammady , Muhammad Abiyyu Kenichi Purbayanto , Eka Nurfani , Toto Winata , Euis Sustini , Rena Widita , Yudi Darma
Abstract The structural, optical, and electrical properties of undoped and Al-doped ZnO films deposited on p-Si (001) substrate were studied using DC-unbalanced magnetron sputtering. This study is motivated by the absence of detail reports concerning the orbital states inducing the optical bandgap (Eg) blueshift. Besides, the influences of Al on the possible modification of point defect and the photodetecting performance are highlighted to offer guidelines for better development in ZnO-based photodetector. It was found that the Al doping reduced the grain size. The doping increased the lattice parameters and slightly decreased the local-symmetry distortion at ZnO4. From the absorbance spectra, the doping increased Eg of ZnO film (3.28–3.36 eV), induced by the Burstein-Moss effect. From the density-functional calculation, the Burstein-Moss effect induced Eg from the valence band maximum (VBM) to Fermi level located above the lowest Zn 4s conduction state. From the photoluminescence spectra, the undoped film showed the transitions from O vacancy, Zn interstitial, and free-exciton states to the VBM. The doped film showed the transitions from Zn interstitial to O interstitial and few Zn vacancy states at the cost of O vacancies. Moreover, the energy level of free-exciton states slightly decreased. Notably, O interstitials increased the lattice parameters. From the electrical properties, the doping enhanced the ultraviolet-region photo-to-dark-current ratio up to 3.044 V, leading to the photodetecting sensitivity enhancement. This study emphasizes the significant effect of Al doping on the optical absorbance, point-defect evolution, and photodetecting performance of ZnO film for low-voltage ultraviolet photodetector applications.
中文翻译:
Al掺杂对ZnO薄膜晶体结构、光学性能和光电探测性能的影响
摘要 使用直流非平衡磁控溅射方法研究了沉积在 p-Si (001) 衬底上的未掺杂和掺杂铝的 ZnO 薄膜的结构、光学和电学特性。这项研究的动机是缺乏关于导致光学带隙 (Eg) 蓝移的轨道状态的详细报告。此外,强调了 Al 对点缺陷的可能修饰和光电检测性能的影响,为更好地开发基于 ZnO 的光电探测器提供指导。发现Al掺杂减小了晶粒尺寸。掺杂增加了晶格参数并略微降低了 ZnO4 的局部对称畸变。从吸收光谱来看,掺杂增加了 ZnO 薄膜的 Eg(3.28-3.36 eV),这是由 Burstein-Moss 效应引起的。从密度泛函计算,Burstein-Moss 效应将 Eg 从价带最大值 (VBM) 诱导到位于最低 Zn 4s 传导态上方的费米能级。从光致发光光谱来看,未掺杂的薄膜显示出从 O 空位、Zn 间隙和自由激子态到 VBM 的转变。掺杂薄膜显示出从 Zn 间隙到 O 间隙的转变,以及以 O 空位为代价的少量 Zn 空位。此外,自由激子态的能级略有下降。值得注意的是,O 间隙增加了晶格参数。从电学性质来看,掺杂将紫外区光暗电流比提高到 3.044 V,从而提高了光电探测灵敏度。本研究强调了 Al 掺杂对光吸收、点缺陷演变、
更新日期:2020-02-01
中文翻译:
Al掺杂对ZnO薄膜晶体结构、光学性能和光电探测性能的影响
摘要 使用直流非平衡磁控溅射方法研究了沉积在 p-Si (001) 衬底上的未掺杂和掺杂铝的 ZnO 薄膜的结构、光学和电学特性。这项研究的动机是缺乏关于导致光学带隙 (Eg) 蓝移的轨道状态的详细报告。此外,强调了 Al 对点缺陷的可能修饰和光电检测性能的影响,为更好地开发基于 ZnO 的光电探测器提供指导。发现Al掺杂减小了晶粒尺寸。掺杂增加了晶格参数并略微降低了 ZnO4 的局部对称畸变。从吸收光谱来看,掺杂增加了 ZnO 薄膜的 Eg(3.28-3.36 eV),这是由 Burstein-Moss 效应引起的。从密度泛函计算,Burstein-Moss 效应将 Eg 从价带最大值 (VBM) 诱导到位于最低 Zn 4s 传导态上方的费米能级。从光致发光光谱来看,未掺杂的薄膜显示出从 O 空位、Zn 间隙和自由激子态到 VBM 的转变。掺杂薄膜显示出从 Zn 间隙到 O 间隙的转变,以及以 O 空位为代价的少量 Zn 空位。此外,自由激子态的能级略有下降。值得注意的是,O 间隙增加了晶格参数。从电学性质来看,掺杂将紫外区光暗电流比提高到 3.044 V,从而提高了光电探测灵敏度。本研究强调了 Al 掺杂对光吸收、点缺陷演变、