High-Brightness Blue InP Quantum Dot-Based Electroluminescent Devices: The Role of Shell Thickness.,The Journal of Physical Chemistry Letters

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High-Brightness Blue InP Quantum Dot-Based Electroluminescent Devices: The Role of Shell Thickness.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-01-18 , DOI: 10.1021/acs.jpclett.9b03567
Han Zhang ₁ , Xiaoyu Ma ₁ , Qingli Lin ₁ , Zaiping Zeng ₁ , Hongzhe Wang ₁ , Lin Song Li ₁ , Huaibin Shen ₁ , Yu Jia _{1,

2} , Zuliang Du ₁

Affiliation

InP quantum dots (QDs) are considered as one of the most promising candidates of Cd- or Pb-based QDs in the applications of display and lighting. However, the performances of blue InP QDs and the corresponding light emitting devices (LEDs) are far inferior to those of their red and green counterparts, which strongly limits the development of InP QD based LEDs (QLEDs) technology. Here, high quantum yield (∼81%) and large size (∼7.0 ± 0.9 nm) InP/GaP/ZnS//ZnS QDs with a thick shell have been successfully synthesized by a shell engineering approach, and the corresponding QLEDs exhibit a record brightness and external quantum efficiency of 3120 cd·m-2 and 1.01%, respectively. Large-scale density functional theory calculations on thousands-of-atoms QDs indicate that thicker-shell ones favor a more balanced carrier injection in the QD film and simultaneously suppress the FRET between closely packed QDs, which collectively contribute to the improved blue device performances.

中文翻译：

高亮度蓝色InP量子点基电致发光器件：壳厚度的作用。

InP量子点（QD）被认为是在显示和照明应用中最有前途的基于Cd或Pb的QD候选之一。但是，蓝色InP QD及其相应的发光器件（LED）的性能远不及其红色和绿色同类产品，这极大地限制了基于InP QD的LED（QLED）技术的发展。在此，通过壳工程方法成功地合成了具有厚壳的高量子产率（〜81％）和大尺寸（〜7.0±0.9 nm）InP / GaP / ZnS // ZnS QD，并且相应的QLED表现出创纪录的亮度和外部量子效率分别为3120 cd·m-2和1.01％。

更新日期：2020-01-23

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