P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.,ACS Applied Materials & Interfaces

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P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-01-28 , DOI: 10.1021/acsami.9b19864
Mengge Li ₁ , Jiadong Yao ₁ , Xiaoxiang Wu ₁ , Shucheng Zhang ₁ , Boran Xing ₁ , Xinyue Niu ₁ , Xiaoyuan Yan ₁ , Ying Yu ₁ , Yali Liu ₁ , Yewu Wang _{1,

2}

Affiliation

Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via Nb, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.

中文翻译：

通过化学气相沉积法在大面积单层MoS2中进行P型掺杂。

近年来，已广泛报道了具有优异性能的二硫化钼（MoS2）。但是，由于其固有的顽固n型电导率，在MoS2中实现p型电导率是一个巨大的挑战。替代过渡金属掺杂已被证明是调节其固有特性并增强器件性能的有效方法。本文中，我们通过一步盐辅助化学气相沉积法报道了Nb掺杂大面积单层MoS2的生长。电学测量表明，Nb掺杂抑制了MoS2中的n型电导率，并在硫气氛下退火后显示出双极传输行为，这突出表明了通过Nb的p型掺杂效应，这与费米能级转移至价带最大值。

更新日期：2020-01-29

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