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Highly Crystalline and Semiconducting Imine-Based Two-Dimensional Polymers Enabled by Interfacial Synthesis.
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2020-02-12 , DOI: 10.1002/anie.201915217 Hafeesudeen Sahabudeen 1 , Haoyuan Qi 1, 2 , Marco Ballabio 3 , Miroslav Položij 1 , Selina Olthof 4 , Rishi Shivhare 1 , Yu Jing 5 , SangWook Park 1 , Kejun Liu 1 , Tao Zhang 1 , Ji Ma 1 , Bernd Rellinghaus 6, 7 , Stefan Mannsfeld 1 , Thomas Heine 1 , Mischa Bonn 3 , Enrique Cánovas 3, 8 , Zhikun Zheng 9 , Ute Kaiser 2 , Renhao Dong 1 , Xinliang Feng 1
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2020-02-12 , DOI: 10.1002/anie.201915217 Hafeesudeen Sahabudeen 1 , Haoyuan Qi 1, 2 , Marco Ballabio 3 , Miroslav Položij 1 , Selina Olthof 4 , Rishi Shivhare 1 , Yu Jing 5 , SangWook Park 1 , Kejun Liu 1 , Tao Zhang 1 , Ji Ma 1 , Bernd Rellinghaus 6, 7 , Stefan Mannsfeld 1 , Thomas Heine 1 , Mischa Bonn 3 , Enrique Cánovas 3, 8 , Zhikun Zheng 9 , Ute Kaiser 2 , Renhao Dong 1 , Xinliang Feng 1
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Single-layer and multi-layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the 2D polyimines, which largely limits the long-range transport properties. Here we employ a surfactant-monolayer-assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine-based 2D polymer (PI-2DP) films with square and hexagonal lattices, respectively. The synthetic PI-2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100-150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI-2DP are investigated by time-resolved terahertz spectroscopy. Typically, the porphyrin-based PI-2DP 1 film exhibits a p-type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm2 V-1 s-1 , superior to the previously reported polyimine based materials.
中文翻译：
通过界面合成实现的高度结晶和半导体亚胺基二维聚合物。
通过界面合成方法已经实现了单层和多层二维聚亚胺薄膜。然而，实现二维聚亚胺的最大结晶度仍然是一个巨大的挑战，这在很大程度上限制了长程传输性能。在这里，我们采用表面活性剂单层辅助界面合成（SMAIS）方法成功制备了分别具有方形和六角形晶格的含有卟啉和三嗪的聚亚胺基二维聚合物（PI-2DP）薄膜。合成的 PI-2DP 薄膜具有多晶多层结构，厚度可调，范围为 6 至 200 nm 和大晶域（尺寸为 100-150 nm）。由于高结晶度和电活性卟啉部分的存在，PI-2DP 的光电特性通过时间分辨太赫兹光谱进行了研究。通常，卟啉基PI-2DP 1 薄膜表现出p型半导体行为，带隙为1.38 eV，空穴迁移率高达0.01 cm2 V-1 s-1，优于先前报道的聚亚胺基材料。
更新日期：2020-02-14
中文翻译：
通过界面合成实现的高度结晶和半导体亚胺基二维聚合物。
通过界面合成方法已经实现了单层和多层二维聚亚胺薄膜。然而，实现二维聚亚胺的最大结晶度仍然是一个巨大的挑战，这在很大程度上限制了长程传输性能。在这里，我们采用表面活性剂单层辅助界面合成（SMAIS）方法成功制备了分别具有方形和六角形晶格的含有卟啉和三嗪的聚亚胺基二维聚合物（PI-2DP）薄膜。合成的 PI-2DP 薄膜具有多晶多层结构，厚度可调，范围为 6 至 200 nm 和大晶域（尺寸为 100-150 nm）。由于高结晶度和电活性卟啉部分的存在，PI-2DP 的光电特性通过时间分辨太赫兹光谱进行了研究。通常，卟啉基PI-2DP 1 薄膜表现出p型半导体行为，带隙为1.38 eV，空穴迁移率高达0.01 cm2 V-1 s-1，优于先前报道的聚亚胺基材料。
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