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Local Structure Heterogeneity in Sm-Doped AgNbO3 for Improved Energy-Storage Performance.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-01-23 , DOI: 10.1021/acsami.9b20803 Jing Gao 1 , Qing Liu 1 , Jinfeng Dong 1 , Xuping Wang 2 , Shujun Zhang 3 , Jing-Feng Li 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-01-23 , DOI: 10.1021/acsami.9b20803 Jing Gao 1 , Qing Liu 1 , Jinfeng Dong 1 , Xuping Wang 2 , Shujun Zhang 3 , Jing-Feng Li 1
Affiliation
AgNbO3-based antiferroelectric ceramics have been actively studied for energy-storage applications, where numerous compositional modifications have been implemented to improve their energy-storage performance. In this work, Sm2O3-doped AgNbO3 ceramics were fabricated; the microstructure, dielectric property, and phase transition behavior were investigated. Because of the structure heterogeneity induced by the rare-earth dopant, a diffused antiferroelectric-to-paraelectric phase transition was observed. High-resolution transmission electron microscopy observations confirm the existence of a local pseudo-rhombohedral structure consisting of different lattice orderings, being responsible for the local nanoscale heterogeneity. Of particular significance is the fact that the Sm3+ dopant effectively decreases the dielectric loss and increases the critical antiferroelectric-ferroelectric phase transition electric field, leading to a high energy-storage density of 4.5 J/cm3.
中文翻译:
Sm掺杂AgNbO3中的局部结构异质性可改善储能性能。
基于AgNbO3的反铁电陶瓷已被积极研究用于储能应用,其中已进行了许多成分修改以提高其储能性能。在这项工作中,制造了掺Sm2O3的AgNbO3陶瓷。研究了其微观结构,介电性能和相变行为。由于稀土掺杂物引起的结构异质性,观察到了扩散的反铁电至顺电相变。高分辨率透射电子显微镜观察证实存在由不同晶格有序组成的局部伪菱形体结构,这是局部纳米级异质性的原因。
更新日期:2020-01-24
中文翻译:
Sm掺杂AgNbO3中的局部结构异质性可改善储能性能。
基于AgNbO3的反铁电陶瓷已被积极研究用于储能应用,其中已进行了许多成分修改以提高其储能性能。在这项工作中,制造了掺Sm2O3的AgNbO3陶瓷。研究了其微观结构,介电性能和相变行为。由于稀土掺杂物引起的结构异质性,观察到了扩散的反铁电至顺电相变。高分辨率透射电子显微镜观察证实存在由不同晶格有序组成的局部伪菱形体结构,这是局部纳米级异质性的原因。