A hole-transporting material, N¹,N¹,N³,N³-tetra([1,1′-biphenyl]-4-yl)-N⁵,N⁵-diphenylbenzene-1,3,5-triamine (TDAB-BP), was synthesized by di([1,1′-biphenyl]-4-yl)amine and 3,5-dichloro-N,N-diphenylaniline via Buchwald–Hartwig coupling reaction. The material exhibit high hole mobility, excellent thermal and morphological stability. TDAB-based OLED device exhibited the highest performance in terms of the maximum current efficiency (9.34 cd/A), maximum power efficiency (5.89 lm/W), and maximum external quantum efficiency (6.61%), which is significantly improved than that of the standard device based on 4,4′-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (NPB) (7.12 cd/A, 4.90 lm/W and 5.31%). Furthermore, TDAB-BP shows a higher decomposition temperature (T_d) of 505 °C than that of NPB (418 °C). This material could be a promising hole-transporting material, especially for the high-temperature applications of OLEDs and other organic electronic devices.

空穴传输材料N ¹，N ¹，N ³，N ^3-四（[1,1'-联苯] -4-基）-N ⁵，N ^5-二苯基苯-1,3,5-三胺（TDAB-BP）是由二[[1,1'-联苯] -4-基）胺和3,5-二氯-N，N-二苯基苯胺通过布赫瓦尔德-哈特维格偶联反应。该材料具有高的空穴迁移率，出色的热稳定性和形态稳定性。基于TDAB的OLED器件在最大电流效率（9.34 cd / A），最大功率效率（5.89 lm / W）和最大外部量子效率（6.61％）方面表现出最高的性能，与基于4,4'-双[ N-（1-萘基）-N-苯基-氨基]-联苯（NPB）的标准设备（7.12 cd / A，4.90 lm / W和5.31％）。此外，TDAB-BP表现出更高的分解温度（T _d）比NPB（418°C）高505°C。这种材料可能是有前途的空穴传输材料，特别是对于OLED和其他有机电子设备的高温应用。