Advancements in thin-film transistor (TFT) technology have extended to electronics that can withstand extreme bending or even folding. Although the use of ultrathin plastic substrates has achieved considerable advancement towards this end, free-standing ultrathin plastics inevitably suffer from mechanical instability and are very difficult to handle during TFT fabrication. Here, in addition to the use of a 1.5 μm-thick polyimide (PI) substrate, a 1.5 μm-thick PI film is also deposited on top of the TFT devices to ensure that the devices are located at the neutral plane of the two PI films for high folding stability. For mechanical support during TFT fabrication up to the deposition of the top PI film, the PI substrate is spin coated on top of a carrier glass that is coated with a mixture of carbon nanotubes (CNTs) and graphene oxide (GO). The mixture of CNT and GO facilitates mechanical detachment of the neutral plane (NP) TFTs from the carrier glass before they are transferred to a polydimethylsiloxane (PDMS) substrate as islands. Being located in the neutral bending plane, the NP TFT can be transferred to the PDMS without performance degradation and exhibit excellent mechanical stability after stretching the PDMS substrate up to a 25% elastic elongation.

中文翻译：

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高度耐用的中性平面氧化物TFT，可拉伸电子器件具有0.25 mm的弯曲半径。

薄膜晶体管（TFT）技术的进步已经扩展到可以承受极端弯曲甚至折叠的电子设备。尽管超薄塑料基板的使用已朝着这一目标取得了很大的进步，但是独立式超薄塑料不可避免地会遭受机械不稳定性的困扰，并且在TFT制造过程中很难处理。在这里，除了使用厚度为1.5μm的聚酰亚胺（PI）基板外，还在TFT器件的顶部沉积了厚度为1.5μm的PI膜，以确保器件位于两个PI的中性面膜的高折叠稳定性。为了在TFT制造期间直到顶部PI膜沉积之前进行机械支撑，将PI基板旋涂在载玻片的顶部，该载玻片上涂有碳纳米管（CNT）和氧化石墨烯（GO）的混合物。CNT和GO的混合物有助于将中性面（NP）TFT从载体玻璃上机械分离，然后再将它们作为岛转移到聚二甲基硅氧烷（PDMS）基板上。NP TFT位于中性弯曲平面中，可以将其转移到PDMS中，而不会降低性能，并且在将PDMS基材拉伸到25％的弹性伸长率后，具有出色的机械稳定性。