Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10(7)) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.

中文翻译：

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基于二维各向异性ReS2场效应晶体管的集成数字逆变器。

半导体二维过渡金属二卤化物正在成为后硅电子产品的首选。尽管它们大多数都表现出各向同性的行为，但降低晶格对称性可能会引起各向异性，这在科学上是有趣的，并且可能有用。在这里，我们介绍了原子稀薄的二硫化rh（ReS2）薄片，具有独特的扭曲1T结构，具有片内各向异性。我们制造了单层和少层ReS2场效应晶体管，它们在大电流开/关比（〜10（7））和低亚阈值摆幅（每十倍100 mV）下表现出竞争性能。在两个主轴上观察到的各向异性比达到3.1，在所有已知的二维半导体材料中是最高的。此外，我们通过利用两个ReS2各向异性场效应晶体管成功地演示了具有良好性能的集成数字逆变器，这表明大规模二维逻辑电路的实现前景广阔。我们的结果强调了具有低晶体对称性的二维半导体材料在未来电子应用中的独特性能。