表观粗糙度作为氧化石墨烯（局部）脱氧的指标,Chemistry of Materials

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表观粗糙度作为氧化石墨烯（局部）脱氧的指标
Chemistry of Materials ( IF 7.2 ) Pub Date : 2014-08-11 00:00:00 , DOI: 10.1021/cm502147f
Duncan den Boer ₁ , Jonathan G. Weis ₁ , Carlos A. Zuniga ₁ , Stefanie A. Sydlik ₁ , Timothy M. Swager ₁

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氧化石墨烯（GO）及其还原形式的详细表征仍然是一个挑战。我们已经采用扫描隧道显微镜（STM）通过可控的化学还原来检测具有不同脱氧度的GO样品。在STM形貌测量中对表观高度的粗糙度（即“表观粗糙度”）进行的分析显示，脱氧增加与表观粗糙度减小之间存在相关性。因此，该分析可以作为当前可用于GO和相关材料研究的技术的有用补充。STM尖端下方的高电场的存在会在GO基础平面上局部引发反应，从而导致局部脱氧和sp ²的还原。碳的杂化促进平面度的增加。这些发现与在不同化学还原水平下GO的表观粗糙度值一致，并说明了拥有一种工具可在局部规模上获得结构/化学洞察力的价值。这是使用STM针尖将GO局部还原为还原GO（rGO）和部分还原GO（prGO）而不局部破坏石墨烯样品的第一个示例。纳米尺度上的局部操作对于石墨烯纳米电子学很有用，采用表观粗糙度进行分析是研究氧化石墨烯和相关基础平面化学的另一种工具。

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Apparent Roughness as Indicator of (Local) Deoxygenation of Graphene Oxide

Detailed characterization of graphene oxide (GO) and its reduced forms continues to be a challenge. We have employed scanning tunneling microscopy (STM) to examine GO samples with varying degrees of deoxygenation via controlled chemical reduction. Analysis of the roughness of the apparent height in STM topography measurements, i.e. the “apparent roughness”, revealed a correlation between increasing deoxygenation and decreasing apparent roughness. This analysis can therefore be a useful supplement to the techniques currently available for the study of GO and related materials. The presence of a high electric field underneath the STM tip can locally induce a reaction on the GO basal plane that leads to local deoxygenation, and the restoration of the sp² hybridization of the carbons promotes increased planarity. These findings are in line with the apparent roughness values found for GO at varying levels of chemical reduction and illustrates the value of having a tool to gain structural/chemical insight on a local scale. This is the first example of employing an STM tip to locally reduce GO to reduced GO (rGO) and partially reduced GO (prGO) without locally destroying the graphene sample. Local manipulation on the nanoscale has utility for graphene nanoelectronics, and analysis employing the apparent roughness is an additional tool for the study of graphene oxide and related basal plane chemistry.

更新日期：2014-08-11

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