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Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field‐Effect Transistors
Advanced Materials ( IF 27.4 ) Pub Date : 2017-07-21 , DOI: 10.1002/adma.201702523 Hu Chen 1 , Michael Hurhangee 2 , Mark Nikolka 3 , Weimin Zhang 1 , Mindaugas Kirkus 1 , Marios Neophytou 1 , Samuel J. Cryer 2 , David Harkin 3 , Pascal Hayoz 4 , Mojtaba Abdi-Jalebi 3 , Christopher R. McNeill 5 , Henning Sirringhaus 3 , Iain McCulloch 1, 2
Advanced Materials ( IF 27.4 ) Pub Date : 2017-07-21 , DOI: 10.1002/adma.201702523 Hu Chen 1 , Michael Hurhangee 2 , Mark Nikolka 3 , Weimin Zhang 1 , Mindaugas Kirkus 1 , Marios Neophytou 1 , Samuel J. Cryer 2 , David Harkin 3 , Pascal Hayoz 4 , Mojtaba Abdi-Jalebi 3 , Christopher R. McNeill 5 , Henning Sirringhaus 3 , Iain McCulloch 1, 2
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The charge‐carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin‐film‐transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin‐film morphology evaluated, with the co‐benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom‐gate top‐contact organic field‐effect transistors.
中文翻译：
在场效应晶体管中具有很高迁移率的二噻吩茚并芴（TIF）半导体聚合物
已知当聚合物的能量紊乱最小化时，有机半导体聚合物的电荷-载流子迁移性会提高。融合的平面芳香环结构有助于减少聚合物的构象紊乱，正如包含茚并二噻吩（IDT）重复单元的聚合物所证明的那样，该聚合物在薄膜晶体管（TFT）器件中既具有低Urbach能量又具有高迁移率。扩展此设计主题，合成了包含二噻吩并茚并芴重复单元的共聚物，该共聚物通过两个额外的苯环扩展了稠合的芳族结构，从而进一步增强了聚合物主链的刚性。共聚物的范围准备和它们的电性能和薄膜形态评价，用共与IDT类似物相比，苯并噻二唑聚合物的空穴迁移率提高了两倍，在底栅顶部接触有机场效应晶体管中达到了近3 cm 2 V -1 s -1的值。
更新日期：2017-07-21
中文翻译：
在场效应晶体管中具有很高迁移率的二噻吩茚并芴（TIF）半导体聚合物
已知当聚合物的能量紊乱最小化时，有机半导体聚合物的电荷-载流子迁移性会提高。融合的平面芳香环结构有助于减少聚合物的构象紊乱，正如包含茚并二噻吩（IDT）重复单元的聚合物所证明的那样，该聚合物在薄膜晶体管（TFT）器件中既具有低Urbach能量又具有高迁移率。扩展此设计主题，合成了包含二噻吩并茚并芴重复单元的共聚物，该共聚物通过两个额外的苯环扩展了稠合的芳族结构，从而进一步增强了聚合物主链的刚性。共聚物的范围准备和它们的电性能和薄膜形态评价，用共与IDT类似物相比，苯并噻二唑聚合物的空穴迁移率提高了两倍，在底栅顶部接触有机场效应晶体管中达到了近3 cm 2 V -1 s -1的值。
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