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Topological Insulator Bi2Se3/Si-Nanowire-Based p–n Junction Diode for High-Performance Near-Infrared Photodetector
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-06-29 00:00:00 , DOI: 10.1021/acsami.7b00759
Biswajit Das 1 , Nirmalya S. Das 1 , Samrat Sarkar 2 , Biplab K. Chatterjee 2 , Kalyan K. Chattopadhyay 1, 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2017-06-29 00:00:00 , DOI: 10.1021/acsami.7b00759
Biswajit Das 1 , Nirmalya S. Das 1 , Samrat Sarkar 2 , Biplab K. Chatterjee 2 , Kalyan K. Chattopadhyay 1, 2
Affiliation
Chemically derived topological insulator Bi2Se3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi2Se3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current–voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I+/I–) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 1013 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi2Se3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.
中文翻译:
用于高性能近红外光电探测器的基于拓扑绝缘体Bi 2 Se 3 / Si-纳米线的p–n结二极管
化学衍生的拓扑绝缘体Bi 2 Se 3纳米片/ Si纳米线(SiNWs)异质结是首次采用所有生态友好且经济高效的化学路线制造而成。X射线衍射研究证实了Bi 2 Se 3的适当相形成纳米片。使用场发射扫描电子显微镜研究了单个成分和随时间变化的杂化结构的形态特征。进行了高分辨率透射电子显微镜研究以研究结的实际性质,而使用能量色散X射线研究分析了结处的元素分布以及样品的总体化学计量。研究了在50至300 K之间随温度变化的电流-电压特性以及势垒高度和理想因子的变化。随着温度的升高,观察到势垒高度的增加和理想因子的减小。整流比(I + / I –)在890 nm的暗和近红外(NIR)辐射下,原始Si衬底上的SiNWs衬底分别为3.63和10.44。此外,对不同的光功率强度进行了光电特性分析,最高光响应性和检测率分别确定为934.1 A / W和2.30×10 13 Jones。这些值明显高于以前基于拓扑绝缘子的设备的报告。因此,这项工作建立了一种基于拓扑绝缘体Bi 2 Se 3纳米片和Si纳米线的混合系统,作为先进光电材料的最新有效候选者。
更新日期:2017-06-30
中文翻译:
用于高性能近红外光电探测器的基于拓扑绝缘体Bi 2 Se 3 / Si-纳米线的p–n结二极管
化学衍生的拓扑绝缘体Bi 2 Se 3纳米片/ Si纳米线(SiNWs)异质结是首次采用所有生态友好且经济高效的化学路线制造而成。X射线衍射研究证实了Bi 2 Se 3的适当相形成纳米片。使用场发射扫描电子显微镜研究了单个成分和随时间变化的杂化结构的形态特征。进行了高分辨率透射电子显微镜研究以研究结的实际性质,而使用能量色散X射线研究分析了结处的元素分布以及样品的总体化学计量。研究了在50至300 K之间随温度变化的电流-电压特性以及势垒高度和理想因子的变化。随着温度的升高,观察到势垒高度的增加和理想因子的减小。整流比(I + / I –)在890 nm的暗和近红外(NIR)辐射下,原始Si衬底上的SiNWs衬底分别为3.63和10.44。此外,对不同的光功率强度进行了光电特性分析,最高光响应性和检测率分别确定为934.1 A / W和2.30×10 13 Jones。这些值明显高于以前基于拓扑绝缘子的设备的报告。因此,这项工作建立了一种基于拓扑绝缘体Bi 2 Se 3纳米片和Si纳米线的混合系统,作为先进光电材料的最新有效候选者。